XP151A01C3MR Datasheet, PDF (3/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

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˙ XP151A01C3MR Characteristics
Drain Current vs. Drain /Source Voltage

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Pulse Test, Ta=25:
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Drain/Source Voltage:Vds (V)
Drain/Source On-State Resistance
vs. Gate/Source Voltage
Pulse Test, Ta=25:

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Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance vs. Ambient Temp.
Pulse Test



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Ambient Temperature:Topr (:)

Drain Current vs. Gate/Source Voltage
Pulse Test, Vds=10V



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Gate/Source Voltage:Vgs (V)
Drain/Source On-State Resistance
vs. Drain Current
Pulse Test, Ta=25:

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Drain Current:Id (A)
Gate/Source Cut Off Voltage Variance vs. Ambient Temp.
Vds=10V, Id=1mA





 

    
Ambient Temperature:Topr (:)