XP132A01A0SR Datasheet, PDF (4/4 Pages) Torex Semiconductor – P-Channel Power MOS FET

91""43
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CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

Vgs=0V, f=1MHz
SWITCHING TIME vs. DRAIN CURRENT

Vgs=-5V, Vdd˺-10V, PW=10µsec. duty≤1%
UG



$JTT
$PTT
$STT




Drain-Source Voltage:Vds (V)

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Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=-10V, Id=-5A

REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test












Gate Charge:Qg (nc)

7HTʹ7

7







Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)


Single Pulse









Pulse Width:PW (sec)


750