XP132A01A0SR Datasheet, PDF (2/4 Pages) Torex Semiconductor – P-Channel Power MOS FET

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DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
Yfs
Vf
CONDITIONS
Vds=-30V, Vgs=0V
Vgs=±20V, Vds=0V
Id=-1mA, Vds=-10V
Id=-3A, Vgs=-10V
Id=-1A, Vgs=-5.5V
Id=-3A, Vds=-10V
If=-5A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
-10
µA
±10
µA
-1.0
-2.5
V
0.075
Ω
0.105
Ω
5
S
-0.85
-1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
Ta=25:
MIN
TYP
MAX
UNITS
780
pF
560
pF
200
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=-5V, Id=-3A
Vdd=-10V
Ta=25:
MIN
TYP
MAX
UNITS
20
ns
25
ns
30
ns
20
ns
11 Thermal Characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
Implement on a glass epoxy
(channel-ambience)
Rth (ch-a)
resin PCB
50
˚C/W
748