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| XP131A1715SR Datasheet, PDF (4/4 Pages) Torex Semiconductor – N-Channel Power MOS FET | |||
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91"43
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE
7HT 7
G .)[
5B Ë
SWITCHING TIME vs. DRAIN CURRENT
7HT 7
7EE˺7
18 ÐT
EVUZâ¤
5B Ë
11
$JTT
$PTT
$STT
UG
UE PGG
US
Drain-Source Voltage:Vds (V)
UE PO
Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
7ET 7
*E "
5B Ë
Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
1VMTF5FTU
5B Ë
7
7
7
7HT 7
7
Source-Drain Voltage:Vsd (V)
STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
3UI DIB
Ë8 *NQMFNFOUFEPOBHMBTTFQPYZ1$#
4JOHMF1VMTF
1VMTF8JEUI18 T
714
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