XP131A1715SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

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NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.012 Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
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The XP131A1715SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
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GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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Low on-state resistance : Rds (on) = 0.012Ω ( Vgs = 4.5V )
: Rds (on) = 0.015Ω ( Vgs = 2.5V )
: Rds (on) = 0.025Ω ( Vgs = 1.5V )
Ultra high-speed switching
Operational Voltage : 1.5V
High density mounting : SOP-8
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PARAMETER
SYMBOL RATINGS
UNITS
Drain - Source Voltage
Vdss
20
V
Gate - Source Voltage
Vgss
+8
V
Drain Current (DC)
Id
10
A
Drain Current (Pulse)
Idp
40
A
Reverse Drain Current
Idr
10
A
Continuous Channel
Pd
2.5
W
Power Dissipation (note)
Channel Temperature
Tch
150
O_C
Storage Temperature
Tstg
-55 ~ 150
O_C
( note ) : When implemented on a glass epoxy PCB
711