XP131A0526SR Datasheet, PDF (4/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

91"43
CAPACITANCE vs. DRAIN-SOURCE VOLTAGE

Vgs=0V, f=1MHz
SWITCHING TIME vs. DRAIN CURRENT

Vgs=5V, Vdd˺10V, PW=10µsec. duty≤1%
11


$JTT

$PTT

$STT








Drain-Source Voltage:Vds (V)
UG


UE PGG

US

UE PO




Drain Current:Id (A)
GATE-SOURCE VOLTAGE vs. GATE CHARGE
Vds=10V, Id=10A












Gate Charge:Qg (nc)
REVERSE DRAIN CURRENT
vs. SOURCE-DRAIN VOLTAGE
Pulse Test



7HTʹ7


 7








Source-Drain Voltage:Vsd (V)







STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)
Single Pulse




Pulse Width:PW (sec)


726