XP131A0526SR Datasheet, PDF (3/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

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DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
Pulse Test, Ta=25°C

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Drain-Source Voltage:Vds (V)
DRAIN CURRENT vs. GATE-SOURCE VOLTAGE
Pulse Test, Vds=10V




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Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. GATE-SOURCE VOLTAGE
Pulse Test, Ta=25°C


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Gate-Source Voltage:Vgs (V)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. AMBIENT TEMPERATURE
Pulse Test



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Ambient Temp.:Topr (°C)
DRAIN-SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
Pulse Test, Ta=25°C

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Drain Current:Id (A)
GATE-SOURCE CUT-OFF VOLTAGE VARIANCE
vs. AMBIENT TEMPERATURE
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Vds=10V, Id=1mA





 

    
Ambient Temp.:Topr (°C)
725