XC61H Datasheet, PDF (4/13 Pages) Torex Semiconductor – Voltage Detector with Delay Circuit Built-In

XC61H Series
˙ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
Input Voltage
Output Current
Output Voltage
CMOS
N-ch open drain
Power Dissipation
SOT-23
Operating Temperature Range
Storage Temperature Range
V_IN
I_OUT
RESTB
Pd
Topr
Tstg
12.0
50
V_SS-0.3 ~V_IN+0.3
V_SS -0.3 ~ 12
250
-30ʙ+80
-40ʙ+125
Ta=25ˆ
UNITS
V
mA
V
mW
ˆ
ˆ
˙ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
Detect Voltage
V_DF
Hysteresis Width
Supply Current ^(*1)
Operating Voltage
Output Current
V_HYS
I_SS
V_IN
I_OUT
V_DF=1.6Vʙ6.0V
N-ch, V_DS = 0.5V
P-ch, V_DS=2.1V
(CMOS Output)
V_IN = 1.5V
V_IN = 2.0V
V_IN = 3.0V
V_IN = 4.0V
V_IN = 5.0V
V_IN = 1.0V
V_IN = 2.0V
V_IN = 3.0V
V_IN = 4.0V
V_IN = 5.0V
V_IN = 8.0V
MIN.
V_DF(T)
x 0.98
V_DF
x 0.02
-
-
-
-
-
0.7
1.0
3.0
5.0
6.0
7.0
TYP.
V_DF(T)
V_DF
x 0.05
0.9
1.0
1.3
1.6
2.0
-
2.2
7.7
10.1
11.5
13.0
-10.0
MAX.
V_DF(T)
x 1.02
V_DF
x 0.08
2.6
3.0
3.4
3.8
4.2
10.0
-
-
-
-
-
-2.0
Ta = 25ˆ
UNITS CIRCUIT
V
ᶃ
V
ᶃ
ЖA
ᶄ
V
ᶃ
ᶅ
mA
ᶆ
Leakage
Current
CMOS Output
Nch Open Drain
I_LEAK
V_IN=10.0V, V_OUT=10.0V
Detect Voltage
Temperature Characteristics
϶V_DF
϶ToprŋV_DF
Release Delay Time
(VDR Ë  RESEB inversion)
t_DR
VIN changes from 0.6V to 10V
-
0.01
-
ЖA
ᶅ
-
0.01 0.1
-
±100
- ppm/ˆ
-
50
-
200
80
-
400
ms
ᶇ
1
-
50
VDF (T) is nominal detect voltage value
Release Voltage: VDR = VDF + VHYS
(*1) The supply current during power-start until output being stable (during release operation) is 2ЖA greater with comparison to the period
after the completion of release operation because of the shoot-through current in delay current.
4/13