XP135A1145SR Datasheet, PDF (3/5 Pages) Torex Semiconductor – POWER MOSFET

˙Electrical Characteristics
DC characteristics (N-Channel Power MOS FET)
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Vds = 30 , Vgs = 0V
Vgs = ± 20 , Vds = 0V
Id = 1mA , Vds = 10V
Id = 3A , Vgs = 10V
Id = 3A , Vgs = 4.5V
Id = 3A , Vds = 10V
If = 6A , Vgs = 0V
( note ) : Effective during pulse test.
Ta=25^OC
MIN
TYP MAX
UNITS
10
µA
±1
µA
1.0
2.5
V
0.026 0.033
Ω
0.035 0.045
Ω
12
S
0.85
1.1
V
Dynamic characteristics
PARAMETER
SYMBOL
CONDITIONS
Ta=25^OC
MIN
TYP MAX
UNITS
Input Capacitance
Ciss
620
pF
Output Capacitance
Coss
Vds = 10V , Vgs = 0V
350
pF
u
Feedback Capacitance
Crss
f = 1 MHz
120
pF
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
Vgs = 5V , Id = 3A
Vdd = 10V
Ta=25^OC
MIN
TYP MAX
UNITS
15
ns
20
ns
30
ns
10
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP MAX
UNITS
62.5
O_{C / W}