XP135A1145SR Datasheet, PDF (1/5 Pages) Torex Semiconductor – POWER MOSFET

91"43
1PXFS
.04
'&5
˗N-Channel/P-Channel Power MOS FET
˗DMOS Structure
˗Low On-State Resistance : 0.045Ω max (Nch)
0.110Ω max (Pch)
˗Ultra High-Speed Switching
˗SOP - 8 Package
˗Two FET Devices Built-in
˙General Description
The XP135A1145SR is a N-Channel/P-Channel Power MOS FET
with low on-state resistance and ultra high-speed switching
characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
˙Pin Configuration
S1 1
G1 2
S2 3
G2 ⁴
SOP - 8 Top View
8 ^D1
7 ^D1
6 _D2
5 D2
˙Equivalent Circuit
̍
̎
̔
̓
̏
̒
̐
̑
N-Channel/P - Channel MOS FET
( 2 devices built-in )
˙Applications
˔Notebook PCs
˔Cellular and portable phones
˔On - board power supplies
˙Features
Low on-state resistance (Nch) :
Rds (on) = 0.033Ω ( Vgs = 10V )
Rds (on) = 0.045Ω ( Vgs = 4.5V )
Low on-state resistance (Pch) :
Rds (on) = 0.065Ω ( Vgs = -10V )
Rds (on) = 0.110Ω ( Vgs = -4.5V )
Ultra high-speed switching
Operational Voltage : 4.5V (Nch) : -4.5V (Pch)
High density mounting : SOP - 8
˙Pin Assignment
PIN NUMBER PIN NAME
FUNCTION
u
1
S1
Source (Nch)
2
G1
Gate (Nch)
3
S2
Source (Pch)
4
G2
Gate (Pch)
5-6
D2
Drain (Pch)
7-8
D1
Drain (Nch)
˙Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
I dp
I dr
Pd
RATINGS
Nch Pch
30 - 30
ʶ20 ʶ20
6
-4
20 - 16
6
-4
2
Tch
150
Tstg
- 55 to 150
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C
( note ) : When implemented on a glass epoxy PCB