XC61F_1 Datasheet, PDF (3/12 Pages) Torex Semiconductor – Voltage Detectors, Delay Circuit Built-In

■BLOCK DIAGRAMS
(1) CMOS output
(2) N-channel open drain output
XC61F
Series
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
Input Voltage
Output Current
Output Voltage
CMOS
N-ch open drain
SOT-23
Power Dissipation
SOT-89
TO-92
Operating Temperature Range
Storage Temperature Range
SYMBOL
VIN
IOUT
VOUT
Pd
Topr
Tstg
RATINGS
12.0
50
VSS -0.3 ~ VIN + 0.3
VSS -0.3 ~ 9
150
500
300
-30～+85
-40～+125
Ta = 25℃
UNITS
V
mA
V
mW
℃
℃
■ELECTRICAL CHARACTERISTICS
Ta=25℃
PARAMETER
Detect Voltage
Hysteresis Range
Supply Current
Operating Voltage
Output Current
Detect Voltage
Temperature
Characteristics
Transient Delay Time
(VDR → VOUT inversion)
SYMBOL
VDF
VHYS
ISS
VIN
IOUT
ΔVDF
ΔTopr･
VDF
TDLY^＊
CONDITIONS
VIN = 1.5V
VIN = 2.0V
VIN = 3.0V
VIN = 4.0V
VIN = 5.0V
VDF= 1.6V to 6.0V
VIN = 1.0V
VIN = 2.0V
N-ch VDF =0.5V
VIN = 3.0V
VIN = 4.0V
VIN = 5.0V
CMOS, P-ch VDF=2.1V VIN = 8.0V
MIN.
VDF(T)
x 0.98
VDF
x 0.02
-
-
-
-
-
0.7
-
-
-
-
-
-
-
VIN changes from 0.6V to 10V
50
TYP.
VDF(T)
VDF
x 0.05
0.9
1.0
1.3
1.6
2.0
-
2.2
7.7
10.1
11.5
13.0
-10.0
±100
-
MAX.
VDF(T)
x 1.02
VDF
x 0.08
2.6
3.0
3.4
3.8
4.2
10.0
-
-
-
-
-
-
-
200
UNITS
V
V
μA
V
mA
ppm/℃
ms
VDF (T): Setting detect voltage value
Release Voltage: VDR = VDF + VHYS
* Transient Delay Time: 1ms to 50ms & 80ms to 400ms versions are also available.
Note: The power consumption during power-start to output being stable (release operation) is 2μA greater than it is after that period
(completion of release operation) because of delay circuit through current.
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