XP152A12C0MR Datasheet, PDF (2/4 Pages) Torex Semiconductor – POWER MOS FET

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DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Vds = - 20V , Vgs = 0V
Vgs = ± 12V , Vds = 0V
Id = -1mA , Vds = - 10V
Id = - 0.4A , Vgs = - 4.5V
Id = - 0.4A , Vgs = - 2.5V
Id = - 0.4A , Vds = - 10V
If = - 0.7A , Vgs = 0V
( note ) : Effective during pulse test.
Ta=25° C
MIN
TYP MAX
UNITS
- 10
µA
± 10
µA
- 0.5
- 1.2
V
0.23
0.3
Ω
0.37
0.5
Ω
1.5
S
-0.8 - 1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds = - 10V , Vgs = 0V
f = 1 MHz
Ta=25° C
MIN
TYP MAX
UNITS
180
pF
120
pF
60
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
Vgs = - 5V , Id = - 0.4A
Vdd = - 10V
Ta=25° C
MIN
TYP MAX
UNITS
5
ns
20
ns
55
ns
70
ns
11
Thermal Characteristics
PARAMETER
Thermal Resistance
( channel-ambience )
SYMBOL
Rth ( ch-a )
CONDITIONS
Implement on a ceramic
PCB
MIN
TYP MAX
UNITS
250
°C / W
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