XP152A12C0MR Datasheet, PDF (1/4 Pages) Torex Semiconductor – POWER MOS FET

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NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.3Ω (max)
NUltra High-Speed Switching
NGate Protect Diode Built-in
NSOT-23 Package
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The XP152A12C0MR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
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GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
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Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V )
: Rds (on) = 0.5Ω ( Vgs = -2.5V )
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage : -2.5V
High density mounting : SOT-23
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PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
I dp
I dr
Pd
Tch
Tstg
RATINGS
-20
+ 12
-0.7
-2.8
-0.7
0.5
150
-55 ~ 150
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C
( note ) : When implemented on a ceramic PCB
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