XP135A1145SR_1 Datasheet, PDF (2/8 Pages) Torex Semiconductor – Power MOSFET

XP135A1145SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics (N-channel Power MOSFET)
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
Vds= 30V, Vgs= 0V
Vgs=±20V, Vds= 0V
Id= 1mA, Vds= 10V
Id= 3A, Vgs= 10V
Id= 3A, Vgs= 4.5V
Forward Transfer Admittance *1 | Yfs |
Id= 3A, Vds= 10V
Body Drain Diode
Forward Voltage
Vf
*1 Effective during pulse test.
If= 6A, Vgs= 0V
MIN.
-
-
1.0
-
-
TYP.
-
-
-
0.026
0.035
Ta = 25℃
MAX. UNITS
10
μA
±1
μA
2.5
V
0.033
Ω
0.045
Ω
-
12
-
S
-
0.85 1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= 10V, Vgs=0V
f= 1MHz
MIN.
-
-
-
TYP.
620
350
120
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= 5V, Id= 3A
Vdd= 10V
MIN.
-
-
-
-
TYP.
15
20
30
10
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP. MAX. UNITS
62.5
-
℃/W
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