XP135A1145SR_1 Datasheet, PDF (1/8 Pages) Torex Semiconductor – Power MOSFET

XP135A1145SR
Power MOSFET
ETR1116_001
■GENERAL DESCRIPTION
The XP135A1145SR is an N-channel/P-channel Power MOS FET with low on-state resistance and ultra high-speed switching
characteristics.
Two FET devices are built-into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
■FEATURES
Low On-State Resistance (Nch) : Rds (on) = 0.033Ω@ Vgs = 10V
: Rds (on) = 0.045Ω@ Vgs = 4.5V
Low On-State Resistance (Pch) : Rds (on) = 0.065Ω@ Vgs = -10V
: Rds (on) = 0.110Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Driving Voltage
: 4.5V (Nch) : -4.5V (Pch)
N-Channel/P-channel Power MOSFET
DMOS Structure
Two FET Devices Built-in
Package
: SOP-8
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
■PIN ASSIGNMENT
PIN NUMBER
1
2
3
4
5~6
7~8
PIN NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source (Nch)
Gate (Nch)
Source (Pch)
Gate (Pch)
Drain (Pch)
Drain (Nch)
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
RATINGS
SYMBOL
Nch Pch
UNITS
Drain-Source Voltage Vdss 30 -30
V
Gate-Source Voltage Vgss ±20 ±20
V
Drain Current (DC)
Id
6
-4
A
Drain Current (Pulse)
Idp
20 -16
A
Reverse Drain Current Idr
6
-4
A
Channel Power Dissipation * Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature Range Tstg
-55~150
℃
* When implemented on a glass epoxy PCB
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