XP134A11A1SR_1 Datasheet, PDF (2/5 Pages) Torex Semiconductor – Power MOSFET

XP134A11A1SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance *
Forward Transfer Admittance *
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vds=-30V, Vgs=0V
Vgs=±20V, Vds=0V
Id=-1mA, Vds=-10V
Id=-2A, Vgs=-10V
Id=-2A, Vgs=-4.5V
Id=-2A, Vds=-10V
Body Drain Diode
Forward Voltage
Vf
If=-4A, Vgs=0V
*Effective during pulse test.
MIN.
-
-
-1.0
-
-
-
-
TYP.
-
-
-
0.055
0.09
5
-0.85
Ta = 25℃
MAX. UNITS
-10
μA
±1
μA
-2.5
V
0.065
Ω
0.11
Ω
-
S
-1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=-10V, Vgs=0V
f=1MHz
MIN.
-
-
-
TYP.
680
450
170
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=-5V, Id=-2A
Vdd=-10V
MIN.
-
-
-
-
TYP.
15
20
30
20
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP.
62.5
MAX. UNITS
-
℃/W
2/5