XP134A11A1SR_1 Datasheet, PDF (1/5 Pages) Torex Semiconductor – Power MOSFET

XP134A11A1SR
Power MOSFET
ETR1114_001
■GENERAL DESCRIPTION
The XP134A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■FEATURES
Low On-State Resistance :Rds(on)=0.065Ω(Vgs=-10V)
:Rds(on)=0.11Ω(Vgs=-4.5V)
Ultra High-Speed Switching
Driving Voltage
: -4.5V
P-Channel Power MOSFET
DMOS Structure
Two FET Devices Built-in
Package
: SOP-8
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
■PIN ASSIGNMENT
PIN NUMBER
1
2
3
4
5~6
7~8
PIN NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
Ta = 25℃
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
-30
V
Gate-Source Voltage
Vgss ±20
V
Drain Current (DC)
Id
-4
A
Drain Current (Pulse)
Idp
-16
A
Reverse Drain Current
Idr
-4
A
Channel Power Dissipation * Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature Range Tstg -55~150 ℃
* When implemented on a glass epoxy PCB
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