XP133A1330SR Datasheet, PDF (2/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

91"43
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DC Characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
CONDITIONS
Vds = 20V , Vgs = 0V
Vgs = ± 8V , Vds = 0V
Id = 1mA , Vds = 10V
Id = 3A , Vgs = 4.5V
Id = 3A , Vgs = 2.5V
Id = 1A , Vgs = 1.5V
Id = 3A , Vds = 10V
If = 6A , Vgs = 0V
( note ) : Effective during pulse test.
Ta=25° C
MIN
TYP MAX
UNITS
10
µA
±1
µA
0.5
1.2
V
0.025 0.03
Ω
0.03 0.04
Ω
0.045 0.07
Ω
20
S
0.85
1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds = 10V , Vgs = 0V
f = 1 MHz
Ta=25° C
MIN
TYP MAX
UNITS
950
pF
430
pF
180
pF
Switching Characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
11
Thermal Characteristics
PARAMETER
Thermal Resistance
( channel-ambience )
SYMBOL
Rth ( ch-a )
CONDITIONS
Vgs = 5V , Id = 3A
Vdd = 10V
Ta=25° C
MIN
TYP MAX
UNITS
15
ns
20
ns
80
ns
15
ns
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP MAX
UNITS
62.5
°C / W
768