XP133A1330SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – N-Channel Power MOS FET

1PXFS
.04
'&5
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.03Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
NTwo FET Devices Built-in
˙"QQMJDBUJPOT
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
˙(FOFSBM
%FTDSJQUJPO
The XP133A1330SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
˙'FBUVSFT
Low on-state resistance : Rds (on) = 0.03Ω ( Vgs = 4.5V )
: Rds (on) = 0.04Ω ( Vgs = 2.5V )
: Rds (on) = 0.07Ω ( Vgs = 1.5V )
Ultra high-speed switching
Operational Voltage : 1.5V
High density mounting : SOP-8
˙1JO
$POGJHVSBUJPO
4 ̍
( ̎
4 ̏
( ̐
̔%
̓%
̒%
̑%
401
501
7*&8
˙&RVJWBMFOU
$JSDVJU
̍
̎
̔
̓
̏
̐
̒
̑
/$IBOOFM
.04
'&5


'&5
EFWJDFT
CVJMUJO


˙1JO
"TTJHONFOU
PIN
NUMBER
PIN
NAME
FUNCTION
1
S1
Source
2
G1
Gate
3
S2
Source
4
G2
Gate
5~6
D2
Drain
7~8
D1
Drain
11
˙"CTPMVUF
.BYJNVN
3BUJOHT
Ta=25^OC
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage
Vdss
20
V
Gate - Source Voltage
Vgss
+8
V
Drain Current (DC)
Id
6
A
Drain Current (Pulse)
Idp
20
A
Reverse Drain Current
Idr
6
A
Continuous Channel
Pd
2
W
Power Dissipation (note)
Channel Temperature
Tch
150
O_C
Storage Temperature
Tstg
- 55 ~ 150
O_C
( note ) : When implemented on a glass epoxy PCB
767