XP133A1235SR Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – Power MOS FET

XP133A1235SR
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance * Rds(on)
Forward Transfer Admittance *
| Yfs |
Vds=20V, Vgs=0V
Vgs=±12V, Vds=0V
Id=1mA, Vds=10V
Id=3A, Vgs=4.5V
Id=3A, Vgs=2.5V
Id=4A, Vds=10V
Body Drain Diode
Forward Voltage
Vf
If=6A, Vgs=0V
* Effective during pulse test.
MIN.
-
-
0.5
-
-
-
TYP.
-
-
-
0.026
0.035
14
Ta = 25℃
MAX. UNITS
10
μA
±1
μA
1.2
V
0.035
Ω
0.048
Ω
-
S
-
0.85 1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
MIN.
-
-
-
TYP.
760
430
200
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs=5V, Id=3A
Vdd=10V
MIN.
-
-
-
-
TYP.
10
20
55
15
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN.
-
TYP. MAX. UNITS
62.5
-
℃/W
1476