XP133A1235SR Datasheet, PDF (1/4 Pages) List of Unclassifed Manufacturers – Power MOS FET

◆N-Channel Power MOSFET
◆DMOS Structure
◆Low On-State Resistance : 0.035Ω(MAX.)
◆Ultra High-Speed Switching
◆SOP-8 Package
◆Two FET Devices Built-in
■APPLICATIONS
●Notebook PCs
●Cellular and portable phones
●On-board power supplies
●Li-ion battery systems
■GENERAL DESCRIPTION
The XP133A1235SR is an N-channel Power MOSFET with low
on-state resistance and ultra high-speed switching
characteristics. Two FET devices are built into the one package
Because high-speed switching is possible, the IC can be
efficiently set thereby saving energy.
The small SOP-8 package makes high density mounting
possible.
■FEATURES
Low On-State Resistance : Rds(on)=0.035Ω(Vgs= 4.5V)
: Rds(on)=0.048Ω(Vgs = 2.5V)
Ultra High-Speed Switching
Driving Voltage
: 2.5V
High Density Mounting : SOP-8
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
XP133A1235SR ETR1112_001.doc
■PIN ASSIGNMENT
PIN NUMBER
1
2
3
4
5~6
7~8
PIN NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
■ABSOLUTE MAXIMUM RATINGS
Ta = 25℃
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Vdss
20
V
Gate-Source Voltage
Vgss ±12
V
Drain Current (DC)
Id
6
A
Drain Current (Pulse)
Idp
20
A
Reverse Drain Current
Idr
6
A
Channel Power Dissipation * Pd
2
W
Channel Temperature
Tch
150
℃
Storage Temperature Range Tstg -55~150 ℃
* When implemented on a glass epoxy PCB
1475