XP132A1275SR Datasheet, PDF (2/4 Pages) Torex Semiconductor – Power MOS FET

91"43
1PXFS
.04
'&5
˙Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
Drain-Source On-state Resistance
( note )
Forward Transfer Admittance
( note )
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs (off )
Rds ( on )
| Yfs |
Vf
( note ) : Effective during pulse test.
CONDITIONS
Vds = - 20 , Vgs = 0V
Vgs = ± 12 , Vds = 0V
Id = -1mA , Vds = - 10V
Id = - 3A , Vgs = - 4.5V
Id = - 3A , Vgs = - 2.5V
Id = - 3A , Vds = - 10V
If = - 5A , Vgs = 0V
Ta=25° C
MIN
TYP MAX UNITS
- 10
µA
±1
µA
- 0.5
- 1.2
V
0.06 0.075
Ω
0.092 0.115
Ω
8
S
- 0.85 - 1.1
V
Dynamic characteristics
PARAMETER
SYMBOL
Input Capacitance
u
Output Capacitance
Ciss
Coss
Feedback Capacitance
Crss
CONDITIONS
Vds = - 10V , Vgs = 0V
f = 1 MHz
Ta=25° C
MIN
TYP MAX UNITS
770
pF
440
pF
180
pF
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td ( on )
tr
td ( off )
tf
CONDITIONS
Vgs = - 5V , Id = - 3A
Vdd = - 10V
Ta=25° C
MIN
TYP MAX UNITS
10
ns
25
ns
45
ns
40
ns
Thermal characteristics
PARAMETER
Thermal Resistance
( channel - surroundings )
SYMBOL
Rth ( ch - a )
CONDITIONS
Implement on a glass epoxy
resin PCB
MIN
TYP MAX UNITS
50
°C / W