XP132A1275SR Datasheet, PDF (1/4 Pages) Torex Semiconductor – Power MOS FET

91"43
1PXFS
.04
'&5
˗P-Channel Power MOS FET
˗DMOS Structure
˗Low On-State Resistance : 0.075Ω (max)
˗Ultra High-Speed Switching
˗SOP - 8 Package
˙Applications
˔Notebook PCs
˔
Cellular and portable phones
˔
On - board power supplies
˔Li - ion battery systems
˙General Description
The XP132A1275SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently
set thereby saving energy.
The small SOP-8 package makes high density mounting possible.
˙Features
Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V )
Rds (on) = 0.115Ω ( Vgs = -2.5V )
Ultra high-speed switching
Operational Voltage : -2.5V
High density mounting : SOP - 8
˙Pin Configuration
S1
S2
S3
G4
SOP - 8 Top View
8D
7D
6D
5D
˙Equivalent Circuit
1
8
2
7
3
6
4
5
P - Channel MOS FET
( 1 device built-in )
˙Pin Assignment
PIN NUMBER PIN NAME
FUNCTION
u
1-3
S
4
G
Source
Gate
5-8
D
Drain
˙Absolute Maximum Ratings
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
SYMBOL
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
RATINGS
-20
+ 12
-5
-20
-5
2.5
150
-55 to 150
( note ) : When implemented on a glass epoxy PCB
Ta=25^OC
UNITS
V
V
A
A
A
W
O_C
O_C