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I5127-L Datasheet, PDF (6/9 Pages) Taiwan Memory Technology – High-Speed USB Flash Disk Controller
i5127-L
3. Electrical Specifications
Maximum Ratings
Parameter
i5127-L Lead Temperature Range (soldering, 10 seconds)
Create
Min Typ Max Units
+260°C V
Recommended Operating Condition
Symbol
V33
TOPR
Parameter
Min
3.3V Voltage
3.0
Operating temperature
0
Typ
Max
Units
3.3
3.6
V
70
oC
Symbol
V18
TOPR
Parameter
Min
1.8V Voltage
1.65
Operating temperature 0
Typ
Max
Units
1.8
1.95
V
70
oC
DC Characteristics of Flash Interface and System Pins.
Symbol
VIL
VIH
VOL
VOH
Parameter
Min
Typ
Input LOW voltage
Input HIGH voltage
2.0
Output LOW voltage
Output HIGH voltage
2.4
Max
0.3*V33
0.4
Units
V
V
V
V
DC and Operating Characteristics
Symbol
IIDLE-HS
IRD-HS
IWR-HS
IIDLE-FS
IRD-FS
IWR-FS
ISP
Parameter
High-Speed Idle current (no access, no suspend)
High-Speed Read current
High-Speed Write current
Full-Speed Idle current (no access, no suspend)
Full-Speed Read current
Full-Speed Write current
Suspend current
Min Typ Max Units
66
mA
88
mA
95
mA
54
mA
72
mA
64
mA
550
uA
NOTE: We measure the overall current of a reference module with one Samsung K9F1G08U0M.
Release date: 2007/07/16
© 2007 iCreate Technologies Corporation
This document contains preliminary information on product but not yet fully characterized.
iCreate Technologies Corporation reserves the right to change the specification in any manner without notice.
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