BY251_16 Datasheet, PDF (3/4 Pages) Taiwan Memory Technology – 3A, 200V - 800V Silicon Rectifiers

CREAT BY ART
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
BY251 - BY254
Taiwan Semiconductor
10
f=1.0MHz
Vslg=50mVp-p
1
1
10
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
DO-201AD
100
DIM.
A
B
C
D
E
Unit (mm)
Min Max
5.00 5.60
1.20 1.30
25.40 -
8.50 9.50
25.40 -
Unit (inch)
Min Max
0.197 0.220
0.048 0.052
1.000 -
0.335 0.375
1.000 -
MARKING DIAGRAM
P/N = Specific Device Code
G = Green Compound
YWW = Date Code
F = Factory Code
Document Number: DS_D1406026
Version: D15