BY251_16 Datasheet, PDF (1/4 Pages) Taiwan Memory Technology – 3A, 200V - 800V Silicon Rectifiers

CREAT BY ART
3A, 200V - 800V Silicon Rectifiers
BY251 - BY254
Taiwan Semiconductor
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 1.2 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T_A=25°C unless otherwise noted)
PARAMETER
SYMBOL BY251 BY252 BY253 BY254 UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
V_RRM
200
400
600
800
V
V_RMS
140
280
420
560
V
V_DC
200
400
600
800
V
I_F(AV)
3
A
I_FSM
150
A
Maximum instantaneous forward voltage (Note 1)
@3A
V_F
Maximum reverse current @ rated V_R
Typical junction capacitance (Note 2)
T_J=25°C
T_J=125°C
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
I_R
C_J
R_θJA
T_J
T_STG
Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
1.0
5
100
40
40
- 55 to +150
- 55 to +150
V
μA
pF
°C/W
°C
°C
Document Number: DS_D1406026
Version: D15