TPS65735_16 Datasheet, PDF (9/39 Pages) Texas Instruments – PMU for Active Shutter 3D Glasses

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Electrical Characteristics (continued)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Line regulation
Load regulation
PSRR
Power supply rejection ratio
BOOST CONVERTER
3.7 V ≤ V_VIN ≤ 6.5 V
I_LOAD(LDO) = –10 mA
V_VIN = 3.5 V
0.1 mA ≤ I_LOAD(LDO) ≤ –10 mA
at 20 KHz, I_LOAD(LDO) = 10 mA
V_DO(LDO) = 0.5 V
C_VLDO = 10 µF
I_Q(BST)
R_DSON(BST)
I_{LKG(BST_SW)}
Boost operating quiescent
current
Boost MOSFET switch on-
resistance
Leakage into BST_SW pin
(includes leakage into analog
h-bridge switches)
Boost Enabled, BST_EN = High
I_OUT(BST) = 0 mA
(boost is not switching)
V_BAT = 3.6 V
V_IN(BST) = 2.5 V
I_SW(MAIN) = 200 mA
BST_EN signal = LOW (Boost
disabled)
V_{BST_SW} = 4.2 V
No load on BST_OUT pin
I_SWLIM(BST)
Boost MOSFET switch current
limit
V_DIODE(BST)
V_REF(BST)
Voltage across integrated
boost diode during normal
operation
Boost reference voltage on
BST_FB pin
BST_EN signal = HIGH
V_{BST_SW} = 16.0 V
I_{BST_OUT} = –2 mA
V_REFHYS(BST)
Boost reference voltage
hysteresis on BST_FB pin
T_ON(BST)
Maximum on time detection
threshold
T_OFF(BST)
Minimum off time detection
threshold
T_SHUT(BST)
Boost thermal shutdown
threshold
T_{SHUT-HYS(BST)}
Boost thermal shutdown
threshold hysteresis
FULL H-BRIDGE ANALOG SWITCHES
I_Q(HSW)
Operating quiescent current
for h-bridge switches
R_DSON(HSW)
H-bridge switches on
resistance
T_DELAY(HSW-H)
H-bridge switch propagation
delay, input switched from low V_HBxy = 0 V → V_VLDO
to high state.
T_DELAY(HSW-L)
H-bridge switch propagation
delay, input switched from
high to low state.
V_HBxy = V_VLDO → 0 V
POWER MANAGEMENT CORE CONTROLLER
V_IL(PMIC)
Low logic level for logic
IO logic level decreasing:
signals on power management V_SYS → 0 V
core
I_IN = 1 mA
(BST_EN, CHG_EN, SLEEP,
HBR1, HBR2, HBL1, HBL2)
V_IH(PMIC)
High logic level for signals on
power management core
(BST_EN, CHG_EN, SLEEP,
HBR1, HBR2, HBL1, HBL2)
IO logic level increasing:
0 V → V_SYS
I_IN = 1 mA
TPS65735
SLVSAI6A – JUNE 2011 – REVISED JANUARY 2016
MIN
TYP
MAX UNIT
–1%
1%
–2%
2%
45
dB
100
1.17
2%
5
1.4
2
0.8
150
1.2
2.5%
6.5
1.75
105
20
20
100
100
4.5
µA
1.2
Ω
90
nA
200
mA
1.0
V
1.23
V
3.2%
8
µs
2.1
µs
°C
°C
5
µA
40
Ω
ns
ns
0.4
V
1.2
V
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Specifications
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