TMS464409 Datasheet, PDF (9/33 Pages) Texas Instruments – 16 777 216 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES

TMS464409, TMS464409P, TMS465409, TMS465409P
16 777 216 BY 4-BIT EXTENDED DATA OUT
DYNAMIC RANDOM-ACCESS MEMORIES
SMKS895A – MAY 1997 – REVISED OCTOBER 1997
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
TMS464409 /P
PARAMETER
TEST CONDITIONS†
’464409-40
’464409P-40
MIN
MAX
’464409-50
’464409P-50
MIN
MAX
’464409-60
’464409P-60
MIN
MAX
UNIT
VOH
VOL
II
IO
High-level
output voltage
IOH = – 2 mA
IOH = – 100 µA
LVTTL
2.4
2.4
2.4
V
LVCMOS VCC – 0.2
VCC – 0.2
VCC – 0.2
Low-level
output voltage
IOL = 2 mA
IOL = 100 µA
LVTTL
LVCMOS
0.4
0.4
0.4
V
0.2
0.2
0.2
Input current
(leakage)
VCC = 3.6 V, VI = 0 V to 3.9 V,
All others = 0 V to VCC
± 10
± 10
± 10 µA
Output current VCC = 3.6 V,
(leakage)
CAS high
VO = 0 V to VCC,
± 10
± 10
± 10 µA
Average read-
ICC1ठor write-cycle
current
VCC = 3.6 V,
Minimum cycle
125
100
90 mA
ICC2
Average
standby current
After one memory cycle,
RAS and CAS high,
VIH = 2 V (LVTTL)
After one memory cycle,
RAS and CAS high,
VIH = VCC – 0.2 V
(LVCMOS)
’464409
’464409P
1
1
1 mA
500
500
500 µA
150
150
150 µA
ICC3§
Average
RAS-only
refresh current
VCC = 3.6 V,
RAS cycling,
Minimum cycle,
CAS high (RAS only)
125
100
90 mA
ICC4‡¶
Average EDO
current
VCC = 3.6 V,
RAS low,
tPC = minimum,
CAS cycling
140
110
90 mA
ICC5
Average CBR VCC = 3.6 V, Minimum cycle,
refresh current RAS low after CAS low
160
130
110 mA
ICC6#
Average
self-refresh
current
CAS < 0.2 V, RAS < 0.2 V,
Measured after tRASS minimum
300
300
300 µA
ICC10#
Average
battery-backup
operating
current,
CBR only
tRAS ≤ 300 ns, tRC = 31.25 ms
VCC – 0.2 V ≤ VIH ≤ 3.9 V,
0 V ≤ VIL ≤ 0.2 V,
W and OE = VIH,
Address and data stable
400
400
† _{For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.}
‡ _{Measured with outputs open}
§ _{Measured with a maximum of one address change while RAS = VIL}
¶ _{Measured with a maximum of one address change per EDO cycle, tHPC}
# _{For TMS464409P only}
400 µA
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