BQ24735 Datasheet, PDF (9/42 Pages) Texas Instruments – 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector

www.ti.com
bq24735
SLUSAK9 – SEPTEMBER 2011
ELECTRICAL CHARACTERISTICS (continued)
4.5 V ≤ V_VCC ≤ 24 V, 0°C ≤ T_J ≤ 125°C, typical values are at T_A = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
ANALOG INPUT (ACDET, ILIM)
I_{IN_ LEAK}
Input bias current
PWM OSCILLATOR
V=7V
–1
1
F_SW
PWM switching frequency
F_SW+
PWM increase frequency
F_SW–
PWM decrease frequency
BATFET GATE DRIVER (BATDRV)
ChargeOption () bit [9] = 0 (Default)
ChargeOption() bit [10:9] = 11
ChargeOption() bit [10:9] = 01
600
750
900
665
885 1100
465
615
765
I_BATFET
V_BATFET
R_{BATDRV_LOAD}
BATDRV charge pump current limit
Gate drive voltage on BATFET
Minimum load resistance between
BATDRV and SRN
V_BATDRV - V_SRN when V_SRN > UVLO
40
60
5.5
6.1
6.5
500
R_{BATDRV_OFF}
BATDRV turn-off resistance
ACFET GATE DRIVER (ACDRV)
I = 30 µA
5
6.2
7.4
I_ACFET
V_ACFET
R_{ACDRV_LOAD}
ACDRV charge pump current limit
Gate drive voltage on ACFET
Minimum load resistance between ACDRV
and CMSRC
V_ACDRV–V_CMSRC when V_VCC> UVLO
40
60
5.5
6.1
6.5
500
R_{ACDRV_OFF}
V_{ACFET_LOW}
ACDRV turn-off resistance
ACDRV Turn-Off when Vgs voltage is low
(Specified by design)
I = 30 µA
5
6.2
7.4
5.9
PWM HIGH SIDE DRIVER (HIDRV)
R_{DS_HI_ON}
High side driver turn-on resistance
V_BTST – V_PH = 5.5 V, I = 10 mA
6
10
R_{DS_HI_OFF}
High side driver turn-off resistance
V_BTST – V_PH = 5.5 V, I = 10 mA
0.65
1.3
V_{BTST_REFRESH}
Bootstrap refresh comparator threshold
voltage
V_BTST – V_PH when low side refresh pulse is requested
3.85
4.3
4.7
PWM LOW SIDE DRIVER (LODRV)
R_{DS_LO_ON}
Low side driver turn-on resistance
R_{DS_LO_OFF}
Low side driver turn-off resistance
PWM DRIVER TIMING
V_REGN = 6 V, I = 10 mA
V_REGN = 6 V, I = 10 mA
7.5
12
0.9
1.4
t_{LOW_HIGH}
Driver dead time from low side to high side
20
t_{HIGH_LOW}
Driver dead time from high side to low side
20
INTERNAL SOFT START
I_STEP
Soft start current step
In CCM mode 10mΩ current sensing resistor
64
t_STEP
Soft start current step time
240
SMBus TIMING CHARACTERISTICS
t_R
t_F
t_W(H)
t_W(L)
t_SU(STA)
t_H(STA)
t_SU(DAT)
t_H(DAT)
t_SU(STOP)
t_(BUF)
F_S(CL)
SCLK/SDATA rise time
SCLK/SDATA fall time
SCLK pulse width high
SCLK Pulse Width Low
Setup time for START condition
START condition hold time after which first clock pulse is generated
Data setup time
Data hold time
Setup time for STOP condition
Bus free time between START and STOP condition
Clock Frequency
1
300
4
50
4.7
4.7
4
250
300
4
4.7
10
100
UNIT
μA
kHz
kHz
kHz
µA
V
kΩ
kΩ
μA
V
kΩ
kΩ
V
Ω
Ω
V
Ω
Ω
ns
ns
mA
μs
μs
ns
μs
μs
μs
μs
ns
ns
µs
μs
kHz
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s) :bq24735
Submit Documentation Feedback
9