BQ24735 Datasheet, PDF (30/42 Pages) Texas Instruments – 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector

bq24735
SLUSAK9 – SEPTEMBER 2011
www.ti.com
The bq24735 has charge under current protection (UCP) by monitoring charging current sensing resistor
cycle-by-cycle. The typical cycle-by-cycle UCP threshold is 5mV falling edge corresponding to 0.5A falling edge
for a 10mΩ charging current sensing resistor. When the average charging current is less than 125mA for a 10mΩ
charging current sensing resistor, the low side MOSFET is off until BTST capacitor voltage needs to refresh the
charge. As a result, the converter relies on low side MOSFET body diode for the inductor freewheeling current.
Input Capacitor
Input capacitor should have enough ripple current rating to absorb input switching ripple current. The worst case
RMS ripple current is half of the charging current when duty cycle is 0.5. If the converter does not operate at
50% duty cycle, then the worst case capacitor RMS current occurs where the duty cycle is closest to 50% and
can be estimated by Equation 6:
I_CIN = I_CHG ´ D × (1 - D)
(6)
Low ESR ceramic capacitor such as X7R or X5R is preferred for input decoupling capacitor and should be
placed to the drain of the high side MOSFET and source of the low side MOSFET as close as possible. Voltage
rating of the capacitor must be higher than normal input voltage level. 25V rating or higher capacitor is preferred
for 19-20V input voltage. 10-20μF capacitance is suggested for typical of 3-4A charging current.
Ceramic capacitors show a dc-bias effect. This effect reduces the effective capacitance when a dc-bias voltage is
applied across a ceramic capacitor, as on the input capacitor of a charger. The effect may lead to a significant
capacitance drop, especially for high input voltages and small capacitor packages. See the manufacturer's data
sheet about the performance with a dc bias voltage applied. It may be necessary to choose a higher voltage
rating or nominal capacitance value in order to get the required value at the operating point.
Output Capacitor
Output capacitor also should have enough ripple current rating to absorb output switching ripple current. The
output capacitor RMS current is given:
I_COUT = ^IRIPPLE » 0.29 ´ I_RIPPLE
2´ 3
(7)
The bq24735 has internal loop compensator. To get good loop stability, the resonant frequency of the output
inductor and output capacitor should be designed between 10 kHz and 20 kHz. The preferred ceramic capacitor
is 25V X7R or X5R for output capacitor. 10-20μF capacitance is suggested for a typical of 3-4A charging current.
Place the capacitors after charging current sensing resistor to get the best charge current regulation accuracy.
Ceramic capacitors show a dc-bias effect. This effect reduces the effective capacitance when a dc-bias voltage is
applied across a ceramic capacitor, as on the output capacitor of a charger. The effect may lead to a significant
capacitance drop, especially for high output voltages and small capacitor packages. See the manufacturer's data
sheet about the performance with a dc bias voltage applied. It may be necessary to choose a higher voltage
rating or nominal capacitance value in order to get the required value at the operating point.
Power MOSFETs Selection
Two external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are
internally integrated into the IC with 6V of gate drive voltage. 30V or higher voltage rating MOSFETs are
preferred for 19-20V input voltage.
Figure-of-merit (FOM) is usually used for selecting proper MOSFET based on a tradeoff between the conduction
loss and switching loss. For the top side MOSFET, FOM is defined as the product of a MOSFET's on-resistance,
R_DS(ON), and the gate-to-drain charge, Q_GD. For the bottom side MOSFET, FOM is defined as the product of the
MOSFET's on-resistance, R_DS(ON), and the total gate charge, Q_G.
FOM_top = R_DS(on) x Q_GD; FOM_bottom = R_DS(on) x Q_G
(8)
The lower the FOM value, the lower the total power loss. Usually lower R_DS(ON) has higher cost with the same
package size.
The top-side MOSFET loss includes conduction loss and switching loss. It is a function of duty cycle
(D=V_OUT/V_IN), charging current (I_CHG), MOSFET's on-resistance (R_DS(ON)), input voltage (V_IN), switching frequency
(f_S), turn on time (t_on) and turn off time (t_off):
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