LM3S3826 Datasheet, PDF (830/877 Pages) Texas Instruments – Stellaris® LM3S3826 Microcontroller

Electrical Characteristics
Figure 21-11. Hibernation Module Timing with Internal Oscillator Running in Hibernation
32.768 KHz
(internal)
H1
H8
H2
HIB
H3
WAKE
H5
Figure 21-12. Hibernation Module Timing with Internal Oscillator Stopped in Hibernation
32.768 KHz
(internal)
H1
H8
H2
HIB
H4
WAKE
H6
21.11 Flash Memory
21.12
Table 21-20. Flash Memory Characteristics
Parameter
Parameter Name
Min
Nom
Max
PE_CYC
Number of guaranteed program/erase cycles 15,000
before failure^a
-
-
T_RET
Data retention, -40˚C to +85˚C
10
T_PROG
Word program time
-
T_BPROG
Buffer program time
-
T_ERASE
Page erase time
-
T_ME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
-
-
-
1
-
1
-
12
-
16
Unit
cycles
years
ms
ms
ms
ms
Input/Output Characteristics
Note: All GPIOs are 5-V tolerant, except PB0 and PB1. See “Signal Description” on page 391 for
more information on GPIO configuration.
Table 21-21. GPIO Module Characteristics
Parameter Parameter Name
R_GPIOPU
R_GPIOPD
I_LKG
GPIO internal pull-up resistor
GPIO internal pull-down resistor
GPIO input leakage current^a
Min
Nom
Max
Unit
100
-
300
kΩ
200
-
500
kΩ
-
-
2
µA
830
January 21, 2012
Texas Instruments-Production Data