THS4271_16 Datasheet, PDF (6/50 Pages) Texas Instruments – LOW NOISE, HIGH SLEW RATE, UNITY GAIN STABLE VOLTAGE FEEDBACK AMPLIFIER

THS4271
THS4275
SLOS397F – JULY 2002 – REVISED OCTOBER 2009
www.ti.com
ELECTRICAL CHARACTERISTICS: V_S = 5 V
At R_F = 249 Ω, R_L = 499 Ω, G = +2, unless otherwise noted.
PARAMETER
TEST CONDITIONS
AC PERFORMANCE
Small-signal bandwidth
0.1-dB flat bandwidth
Gain bandwidth product
G = 1, V_O = 100 mV_PP, R_L = 150 Ω
G = –1, V_O = 100 mV_PP
G = 2, V_O = 100 mV_PP
G = 5, V_O = 100 mV_PP
G = 10, V_O = 100 mV_PP
G = 1, V_O = 100 mV_PP, R_L = 150 Ω
G > 10, f = 1 MHz
Full-power bandwidth
Slew rate
Settling time to 0.1%
Settling time to 0.01%
Harmonic distortion
Second harmonic distortion
Third harmonic distortion
Third-order intermodulation (IMD₃)
G = –1, V_O = 2 V_p
G = 1, V_O = 2 V Step
G = –1, V_O = 2 V Step
G = –1, V_O = 2 V Step
G = –1, V_O = 2 V Step
G = 1, V_O = 1 V_PP, f = 30 MHz
R_L = 150 Ω
R_L = 499 Ω
R_L = 150 Ω
R_L = 499 Ω
G = 2, V_O = 1 V_PP, R_L = 150Ω,
f = 70 MHz
Third-order output intercept (OIP₃)
G = 2, V_O = 1 V_PP, R_L = 150Ω,
f = 70 MHz
Input voltage noise
f = 1 MHz
Input current noise
f = 10 MHz
DC PERFORMANCE
Open-loop voltage gain (A_OL)
Input offset voltage
Average offset voltage drift
Input bias current
Average bias current drift
Input offset current
Average offset current drift
INPUT CHARACTERISTICS
V_O = ± 50 mV, R_L = 499 Ω
V_CM = V_S/2
V_CM = V_S/2
V_CM = V_S/2
V_CM = V_S/2
V_CM = V_S/2
V_CM = V_S/2
Common-mode input range
Common-mode rejection ratio
Input resistance
V_CM = ± 0.5 V, V_O = 2.5 V
Common-mode
Input capacitance
Common-mode / differential
OUTPUT CHARACTERISTICS
Output voltage swing
G = +2
Output current (sourcing)
Output current (sinking)
Output impedance
R_L = 10 Ω
R_L = 10 Ω
f = 1 MHz
TYP
+25°C
OVER TEMPERATURE ⁽¹⁾
+25°C
0°C to –40°C to
+70°C +85°C
UNITS
1.2
GHz
380
MHz
360
MHz
80
MHz
35
MHz
120
MHz
350
MHz
60
MHz
700
V/μs
750
V/μs
18
ns
66
ns
75
dBc
72
dBc
-70
dBc
70
dBc
-65
dBc
32
dBm
3
nV/√Hz
3
pA/√Hz
68
63
60
60
dB
5
10
12
12
mV
±10
±10
μV/°C
6
15
18
18
μA
±10
±10
nA/°C
1
6
8
8
μA
±10
±10
nA/°C
1/4 1.3/3.7 1.4/3.6 1.5/3.5
V
72
67
65
65
dB
5
MΩ
0.4/0.8
pF
1.2/3.8 1.4/3.6 1.5/3.5 1.5/3.5
V
120
100
90
90
mA
65
50
40
40
mA
0.1
Ω
(1) See Maximum Die Temperature to Prevent Oscillation section in the Application Information of this data sheet.
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