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DRV8840_15 Datasheet, PDF (6/28 Pages) Texas Instruments – DC Motor Driver IC
DRV8840
SLVSAB7D – MAY 2010 – REVISED DECEMBER 2015
6.5 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
POWER SUPPLIES
IVM
VM operating supply current
IVMQ
VM sleep mode supply current
VUVLO VM undervoltage lockout voltage
V3P3OUT REGULATOR
VM = 24 V, fPWM < 50 kHz
VM = 24 V
VM rising
V3P3
V3P3OUT voltage
LOGIC-LEVEL INPUTS
IOUT = 0 to 1 mA
VIL
Input low voltage
VIH
Input high voltage
VHYS Input hysteresis
IIL
Input low current
IIH
Input high current
RPD
Internal pulldown resistance
nFAULT OUTPUT (OPEN-DRAIN OUTPUT)
VIN = 0
VIN = 3.3 V
VOL
Output low voltage
IOH
Output high leakage current
DECAY INPUT
IO = 5 mA
VO = 3.3 V
VIL
Input low threshold voltage
VIH
Input high threshold voltage
IIN
Input current
RPU
Internal pullup resistance
RPD
Internal pulldown resistance
H-BRIDGE FETS
For slow decay (brake) mode
For fast decay (coast) mode
RDS(ON) HS FET on resistance
RDS(ON) LS FET on resistance
IOFF
Off-state leakage current
MOTOR DRIVER
VM = 24 V, IO = 1 A, TJ = 25°C
VM = 24 V, IO = 1 A, TJ = 85°C
VM = 24 V, IO = 1 A, TJ = 25°C
VM = 24 V, IO = 1 A, TJ = 85°C
fPWM
Internal current control PWM
frequency
tBLANK Current sense blanking time
tR
Rise time
tF
Fall time
PROTECTION CIRCUITS
IOCP
Overcurrent protection trip level
tTSD
Thermal shutdown temperature
CURRENT CONTROL
Die temperature
IREF
VTRIP
VREF input current
ISENSE trip voltage
VREF = 3.3 V
VREF = 3.3 V, 100% current setting
VREF = 3.3 V, 5% current setting
ΔITRIP
Current trip accuracy
(relative to programmed value)
VREF = 3.3 V, 10% - 34% current setting
VREF = 3.3 V, 38% - 67% current setting
VREF = 3.3 V, 71% - 100% current setting
AISENSE Current sense amplifier gain
Reference only
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MIN TYP MAX UNIT
5
8 mA
10
20 μA
7.8
8.2 V
3.2
3.3
3.4 V
0.6
0.7 V
2.2
5.25 V
0.3 0.45
0.6 V
–20
20 μA
33
100 μA
100
kΩ
0.5 V
1 μA
0
0.8 V
2
V
±40 μA
130
kΩ
80
kΩ
0.1
Ω
0.13 0.16
0.1
Ω
0.13 0.16
–40
40 μA
50
3.75
30
30
kHz
μs
200 ns
200 ns
6
A
150
160
180 °C
–3
635
–25%
–15%
–10%
–5%
3 μA
660
685 mV
25%
15%
10%
5%
5
V/V
6
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