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BQ25505 Datasheet, PDF (6/34 Pages) Texas Instruments – Ultra Low Power Boost Charger with Battery Management and Autonomous Power
bq25505
SLUSBJ3B – AUGUST 2013 – REVISED JANUARY 2014
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ELECTRICAL CHARACTERISTICS (continued)
Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for
conditions of VSTOR = 4.2 V. External components, CIN = 4.7 µF, L1 = 22 µH, CSTOR= 4.7 µF
PARAMETER
TEST CONDITIONS
MIN TYP
MAX UNIT
BATTERY MANAGEMENT
VBAT_OV
Programmable voltage range for overvoltage
threshold
VBAT_SEC increasing
2.2
5.5 V
VBAT_OV_HYST
Battery over-voltage hysteresis (internal)
VBAT_SEC decreasing; VBAT_OV
= 5.25V
24
45 mV
VDELTA
VBAT_OV - VIN(DC)
Main boost charger on; MPPT not
400
mV
sampling VOC
VBAT_UV
Under-voltage threshold
VBAT_SEC decreasing
1.91 1.95
2V
VBAT_UV_HYST
Battery under-voltage hysteresis (internal)
VBAT_SEC increasing
15
32 mV
VBAT_OK_HYST
Programmable voltage range of digital signal
indicating VSTOR (=VBAT_SEC) is OK
VBAT_SEC increasing
VBAT_UV
VBAT_ V
OV
VBAT_OK_PROG
Programmable voltage range of digital signal
indicating VSTOR (=VBAT_SEC) is OK
VBAT_SEC decreasing
VBAT_UV
VBAT_ mV
OK_HYST –
50
VBAT_ACCURACY
Overall Accuracy for threshold values VBAT_OV, Selected resistors are 0.1%
-2
VBAT_OK
tolerance
2%
VBAT_OK(H)
VBAT_OK (High) threshold voltage
Load = 10 µA
VSTOR – mV
200
VBAT_OK(L)
VBAT_OK (Low) threshold voltage
Load = 10 µA
100 mV
ENABLE THRESHOLDS
EN(H)
Voltage for EN high setting. Relative to
VBAT_SEC = 4.2V
VBAT_SEC
V
VBAT_SEC.
– 0.2
EN(L)
Voltage for EN low setting
VBAT_SEC = 4.2V
0.3 V
BIAS and MPPT CONTROL STAGE
VOC_SAMPLE
Time period between two MPPT samples
16
s
VOC_STLG
Settling time for MPPT sample measurement of Device not switching
VIN_DC open circuit voltage
256
ms
VIN_REG
Regulation of VIN_DC during charging
0.5 V < VIN < 4 V; IIN(DC) = 10
mA
10%
MPPT_80
Voltage on VOC_SAMP to set MPPT threshold to
0.80 of open circuit voltage of VIN_DC
VSTOR –
V
0.015
MPPT_50
Voltage on VOC_SAMP to set MPPT threshold to
0.50 of open circuit voltage of VIN_DC
15 mV
VBIAS
Internal reference for the programmable voltage VSTOR ≥ VSTOR_CHGEN
thresholds
1.205 1.21
1.217 V
MULTIPLEXOR
tDEAD
Dead time between VB_SEC_ON and
VB_PRI_ON
5
8 (1)
us
(1) Specified by design.
6
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