BQ2085-V1P2 Datasheet, PDF (6/56 Pages) Texas Instruments – SBS-COMPLIANT GAS GAUGE IC FOR USE WITH THE bq29311

bq2085−V1P2
SLUS590 − DECEMBER 2003
www.ti.com
SMBUS TIMING SPECIFICATIONS
V_DD = 3.0 V to 3.6 V, T_A = −20°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
F_SMB
F_MAS
T_BUF
T_HD:STA
T_SU:STA
T_SU:STO
T_HD:DAT
SMBus operating frequency
SMBus master clock frequency
Bus free time between start and stop
Hold time after (repeated) start
Repeated start setup time
Stop setup time
Data hold time
Slave mode, SMBC 50% duty cycle
Master mode, no clock low slave extend
Receive mode
Transmit mode
10
51.2
4.7
4.0
4.7
4.0
0
300
100 kHz
kHz
µs
µs
µs
µs
ns
T_SU:DAT
Data setup time
250
ns
T_TIMEOUT
Error signal/detect
See ⁽¹⁾
25
35 ms
T_LOW
Clock low period
4.7
µs
T_HIGH
Clock high period
See ⁽²⁾
4.0
50 µs
T_LOW:SEXT
Cumulative clock low slave extend time
See ⁽³⁾
25 ms
T_LOW:MEXT
Cumulative clock low master extend time See ⁽⁴⁾
10 ms
T_F
Clock/data fall time
See ⁽⁵⁾
300 ns
T_R
Clock/data rise time
See ⁽⁶⁾
1000 ns
(1) _{The bq2085−V1P2 times out when any clock low exceeds TTIMEOUT}
(2) _{THIGH Max. is minimum bus idle time. SMBC = 1 for t > 50 µs causes reset of any transaction involving bq2085−V1P2 that is in progress.}
(3) _{TLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to the stop.}
(4) _{TLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to the stop.}
(5) _{Rise time TR = (VILMAX − 0.15 V) to (VIHMIN + 0.15 V).}
(6) _{Fall time TF = 0.9 VDD to (VILMAX − 0.15 V).}
DATA FLASH MEMORY SWITCHING CHARACTERISTICS
V_DD = 3.0 V to 3.6 V, T_A = −20°C to 85°C (unless otherwise noted)
PARAMETER
t_(RETENSION)
Data retention
Flash programming write-cycles
t_(WORDPROG)
Word programming time
I_(DDPROG)
Flash-write supply current
(1) _{Specified by design. Not production tested.}
TEST CONDITIONS
See ⁽¹⁾
See ⁽¹⁾
See ⁽¹⁾
See ⁽¹⁾
MIN TYP MAX UNIT
10
10⁵
Years
Cycles
2 ms
14
16 mA
Register Backup
PARAMETER
I_(RBI)
RBI data-retention input current ⁽¹⁾
V_(RBI)
RBI data-retention voltage
(1) _{Specified by design. Not production tested.}
TEST CONDITIONS
V_RB > 3.0 V, V_DD < V_IT
MIN TYP MAX UNIT
10 100 nA
1.3
V
6