LM3S1918_16 Datasheet, PDF (588/637 Pages) Texas Instruments – Stellaris LM3S1918 Microcontroller

Electrical Characteristics
19.1.6
19.1.7
19.2
19.2.1
Table 19-5. Detailed Power Specifications (continued)
Parameter
Parameter
Name
Conditions
I_{DD_HIBERNATE} Hibernate
mode
V_BAT = 3.0 V
V_DD = 0 V
V_DD25 = 0 V
V_DDA = 0 V
Peripherals = All OFF
System Clock = OFF
Hibernate Module = 32 kHz
a. Pending characterization completion.
3.3 V V_DD,
V_DDA
Nom Max
0
0
2.5 V V_DD25
Nom Max
0
0
3.0 V V_BAT
Unit
Nom Max
16 pending^a µA
Flash Memory Characteristics
Table 19-6. Flash Memory Characteristics
Parameter Parameter Name
Min
PE_CYC
Number of guaranteed program/erase cycles
before failure^a
10,000
T_RET
Data retention at average operating temperature
10
of 85˚C (industrial) or 105˚C (extended)
T_PROG
Word program time
20
T_ERASE
Page erase time
20
T_ME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
Hibernation
Nom
Max
100,000
-
-
-
-
-
-
-
-
250
Unit
cycles
years
µs
ms
ms
Table 19-7. Hibernation Module DC Characteristics
Parameter
V_LOWBAT
R_WAKEPU
Parameter Name
Low battery detect voltage
WAKE internal pull-up resistor
AC Characteristics
Value
Unit
2.35
V
200
kΩ
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 19-1. Load Conditions
pin
C_L = 50 pF
GND
588
Texas Instruments-Production Data
July 16, 2014