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THS4561 Datasheet, PDF (5/35 Pages) Texas Instruments – Low-Power, High Supply Range, 70-MHz, Fully Differential Amplifier
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7 Specifications
THS4561
SBOS874 – AUGUST 2017
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
Voltage
Supply voltage, (VS+) – (VS–)
Supply turn-on/off maximum dV/dT(2)
Input/output voltage range
TBD
Differential input voltage
Current
Continuous input current
Continuous output current(3)
Junction, TJ
Temperature
Operating free-air, TA
–40
Storage, Tstg
–65
MAX
13.5
±0.35
TBD
TBD
±10
±20
150
125
150
UNIT
V
V/µs
V
mA
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Stay below this ± supply turn-on edge rate to make sure that the edge-triggered ESD absorption device across the supply pins remains
off.
(3) Long-term continuous current for electromigration limits.
7.2 ESD Ratings
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
VALUE
±1000
±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
VS+
Single-supply positive voltage
TA
Operating free-air temperature
MIN
NOM
MAX UNIT
2.85
10
12.6
V
–40
25
125
°C
7.4 Thermal Information
THERMAL METRIC(1)
RGT (2)
(VQFN)
THS4561
RUN
(WQFN)
DGK
(VSSOP)
UNIT
16 PINS
10 PINS
8 PINS
RθJA
RθJC(top)
RθJB
ψJT
ψJB
RθJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
TBD
TBD
TBD
°C/W
TBD
TBD
TBD
°C/W
TBD
TBD
TBD
°C/W
TBD
TBD
TBD
°C/W
TBD
TBD
TBD
°C/W
TBD
N/A
N/A
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) Thermal impedance for RGT reported with backside thermal pad soldered to heat spreading plane.
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