MCM28F256ACH Datasheet, PDF (5/14 Pages) Texas Instruments – 256-Mbit (32-Mbit x 8, 16-Mbit x 16) Flash Memory Module with Internal Decoding and Boundary Scan I/O Buffers

Absolute Maximum Ratings (Note 1)
Recommended Operating
If Military Aerospace specified devices are required
Conditions
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Device Power Supply Voltage (V_CC)
4 5V to 5 5V
Device Power Supply Voltage (V_CC)
b0 2V to a7 0V
Erase Write Power Supply Voltage (V_PP) b0 2V to a14 0V
Erase Write Power Supply Voltage (V_PP) (Note 2)
Read-Only Operations (V_PPL)
0 0V to 6 5V
Erase Write Operations (V_PPH)
11 4V to 12 6V
DC Input Diode Current (I_IK)
V_IN e b0 5V
V_IN e V_CC a 0 5V
b20 mA
a20 mA
DC Output Diode Current (I_OK)
V_OUT e b0 5V
V_OUT e V_CC a0 5V
b20 mA
a20 mA
DC Output Voltage (V_OUT)
b0 5V to V_CC a 0 5V
DC Output Source Sink Current (I_OUT)
g70 mA
Input Voltage (V_IN)
Output Voltage (V_OUT)
Case Operating Temperature (T_C)
Industrial
Military
Minimum Input Edge Rate (dV dt)
V_IN from 0 8V to 2 0V
V_CC 4 5V 5 5V
0V to V_CC
0V to V_CC
b45 C to a85 C
b55 C to a125 C
125 mV ns
DC V_CC or Ground Current
Maximum Static Output Current
Per Output Pin (I_CC or I_GND)
g70 mA
Thermal Resistance Junction to Case (i_JC)
5C W
Junction Temperature (T_J)
a150 C
Storage Temperature (T_STG)
b65 C to a150 C
Note 1 Absolute maximum ratings are those values beyond which damage
to the device may occur The databook specifications should be met without
exception to ensure that the system design is reliable over its power supply
temperature and output input loading variables National does not recom-
mend operation of this module outside the datasheet specifications
High Level (I_OH)
Low Level (I_OL)
b32 mA
a64 mA
Note 2 Erase and write operations are inhibited when V_PP e V_PPL and not
guaranteed In the range betveeen V_PPL and V_PPH
DC Electrical Characteristics _{te Symbol}
Parameter
V_IH
Minimum High Input Voltage
le ^VIL
Maximum Low Input Voltage
I_IH
Maximum High Input Current
Conditions
Military
Industrial
T_C e b55 C to a125 C T_C e b45 C to a85 C Units
V_CC e 4 5V to 5 5V
V_CC e 4 5V to 5 5V
20
20
V
08
08
V
V_IN e V_CC
All inputs except TCK TDI TMS
10
10
mA
V_IN e V_CC
TCK TDI TMS Inputs
15 0
15 0
mA
o I_IL
Maximum Low Input Current V_IN e GND
All inputs except TCK TDI TMS
b1 0
b1 0
mA
V_IN e GND
TCK TDI TMS Inputs
b1 2
b1 2
mA
s _IOZT
V_OH
b _VOL
I_OLD
O I_OHD
Maximum I O Leakage Current V_{I O} e V_CC or GND
Minimum High Output Voltage I_OUTe b50 mA
I_OUT e b32 mA
I_OUT e b24 mA
Maximum Low Output Voltage I_OUT e 50 mA
I_OUT e 64 mA
I_OUT e 48 mA
Minimum Dynamic
Output Current
V_OLD e 0 8 V_Max
V_OHD e 2 0 V_Min
g15 0
V_CC b 1 35
24
01
0 55
63
b27
g10 0
mA
V_CC b 1 35
24
V
01
0 55
V
94
mA
b40
I_OS
Minimum Output Short
Circuit Current
V_OUT e 0V
b100
b100
mA
I_CCT
Maximum V_CC Current
per Input at TTL HIGH
V_IN e V_CC b 2 1V
All inputs except TCK TDI TMS
20
20
mA
I_CCS
Maximum V_CC Standby
Current
CE e RP e V_CC
25
25
mA
Maximum test duration 2 0 ms one output loaded at a time
4