LMH6723 Datasheet, PDF (5/28 Pages) National Semiconductor (TI) – Single/Dual/Quad 370 MHz 1 mA Current Feedback Op Amp

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LMH6723, LMH6724
SNOSA83I – AUGUST 2003 – REVISED AUGUST 2014
6.5 ±5V Electrical Characteristics
Unless otherwise specified, A_V = +2, R_F = 1200Ω, R_L = 100Ω. Boldface limits apply at temperature extremes.⁽¹⁾
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
FREQUENCY DOMAIN RESPONSE
SSBW
LSBW
−3 dB Bandwidth Small Signal
−3dB Bandwidth Large Signal
V_OUT = 0.5 V_PP
V_OUT = 4.0 V_PP
260
90
110
85
95
UGBW
−3 dB Bandwidth Unity Gain
.1dB BW .1 dB Bandwidth
DG
Differential Gain
DP
Differential Phase
TIME DOMAIN RESPONSE
V_OUT = .2 V_PP A_V = 1 V/V
V_OUT = 0.5 V_PP
R_L = 150Ω, 4.43 MHz
R_L = 150Ω, 4.43 MHz
370
100
0.03%
0.11
TRS
Rise and Fall Time
4V Step
2.5
TSS
Settling Time to 0.05%
2V Step
30
SR
Slew Rate
4V Step
500
600
DISTORTION and NOISE RESPONSE
HD2
2^nd Harmonic Distortion
2 V_PP, 5 MHz
−65
HD3
3^rd Harmonic Distortion
2 V_PP, 5 MHz
−63
EQUIVALENT INPUT NOISE
VN
Non-Inverting Voltage Noise
>1 MHz
4.3
NICN
Inverting Current Noise
>1 MHz
6
ICN
Non-Inverting Current Noise
>1 MHz
6
STATIC, DC PERFORMANCE
V_IO
Input Offset Voltage
1
±3
±3.7
I_BN
Input Bias Current
Non-Inverting
−2
±4
±5
I_BI
Input Bias Current
Inverting
0.4
±4
±5
PSRR
Power Supply Rejection Ratio
DC, 1V Step
LMH6723
59
57
64
LMH6724
59
55
64
CMRR
Common Mode Rejection Ratio DC, 1V Step
LMH6723
57
55
60
LMH6724
57
53
60
I_CC
Supply Current (per amplifier)
R_L = ∞
1
1.2
1.4
UNIT
MHz
MHz
MHz
MHz
deg
ns
ns
V/μs
dBc
dBc
nV/√Hz
pA/√Hz
pA/√Hz
mV
µA
µA
dB
dB
mA
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that T_J = T_A. No ensured specification of parametric performance is indicated in the electrical
tables under conditions of internal self heating where T_J > T_A. See Application and Implementation for information on temperature
derating of this device. Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as
noted.
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