LM35 Datasheet, PDF (5/15 Pages) National Semiconductor (TI) – Precision Centigrade Temperature Sensors

Electrical Characteristics
(Notes 1, 6)
Parameter
Accuracy,
LM35, LM35C
(Note 7)
Accuracy, LM35D
(Note 7)
Nonlinearity
(Note 8)
Sensor Gain
(Average Slope)
Load Regulation
(Note 3) 0≤I_L≤1 mA
Line Regulation
(Note 3)
Quiescent Current
(Note 9)
Change of
Quiescent Current
(Note 3)
Temperature
Coefficient of
Quiescent Current
Conditions
T _A=+25˚C
T _A=−10˚C
T _A=T_MAX
T _A=T_MIN
T _A=+25˚C
T_A=T_MAX
T_A=T_MIN
T _MIN≤T_A≤T_MAX
Typical
±0.4
±0.5
±0.8
±0.8
±0.3
LM35
Tested
Limit
(Note 4)
±1.0
±1.5
Design
Limit
(Note 5)
±1.5
±0.5
LM35C, LM35D
Tested Design
Typical Limit
Limit
(Note 4) (Note 5)
±0.4
±1.0
±0.5
±1.5
±0.8
±1.5
±0.8
±2.0
±0.6
±1.5
±0.9
±2.0
±0.9
±2.0
±0.2
±0.5
Units
(Max.)
˚C
˚C
˚C
˚C
˚C
˚C
˚C
˚C
T _MIN≤T_A≤T_MAX
T _A=+25˚C
T _MIN≤T_A≤T_MAX
T _A=+25˚C
4V≤V _S≤30V
V _S=+5V, +25˚C
V _S=+5V
V _S=+30V, +25˚C
V _S=+30V
4V≤V_S≤30V, +25˚C
4V≤V _S≤30V
+10.0
±0.4
±0.5
±0.01
±0.02
56
105
56.2
105.5
0.2
0.5
+9.8,
+10.2
±2.0
±0.1
80
82
2.0
±5.0
±0.2
158
161
3.0
+10.0
±0.4
±0.5
±0.01
±0.02
56
91
56.2
91.5
0.2
0.5
±2.0
±0.1
80
82
2.0
+9.8,
+10.2
±5.0
±0.2
138
141
3.0
mV/˚C
mV/mA
mV/mA
mV/V
mV/V
µA
µA
µA
µA
µA
µA
+0.39
+0.7
+0.39
+0.7
µA/˚C
Minimum Temperature
for Rated Accuracy
Long Term Stability
In circuit of
Figure 1, I_L=0
T _J=T_MAX, for
1000 hours
+1.5
±0.08
+2.0
+1.5
±0.08
+2.0
˚C
˚C
Note 1: Unless otherwise noted, these specifications apply: −55˚C≤T_J≤+150˚C for the LM35 and LM35A; −40˚≤T_J≤+110˚C for the LM35C and LM35CA; and
0˚≤T_J≤+100˚C for the LM35D. V_S=+5Vdc and I_LOAD=50 µA, in the circuit of Figure 2. These specifications also apply from +2˚C to T_MAX in the circuit of Figure 1.
Specifications in boldface apply over the full rated temperature range.
Note 2: Thermal resistance of the TO-46 package is 400˚C/W, junction to ambient, and 24˚C/W junction to case. Thermal resistance of the TO-92 package is
180˚C/W junction to ambient. Thermal resistance of the small outline molded package is 220˚C/W junction to ambient. Thermal resistance of the TO-220 package
is 90˚C/W junction to ambient. For additional thermal resistance information see table in the Applications section.
Note 3: Regulation is measured at constant junction temperature, using pulse testing with a low duty cycle. Changes in output due to heating effects can be
computed by multiplying the internal dissipation by the thermal resistance.
Note 4: Tested Limits are guaranteed and 100% tested in production.
Note 5: Design Limits are guaranteed (but not 100% production tested) over the indicated temperature and supply voltage ranges. These limits are not used to
calculate outgoing quality levels.
Note 6: Specifications in boldface apply over the full rated temperature range.
Note 7: Accuracy is defined as the error between the output voltage and 10mv/˚C times the device’s case temperature, at specified conditions of voltage, current,
and temperature (expressed in ˚C).
Note 8: Nonlinearity is defined as the deviation of the output-voltage-versus-temperature curve from the best-fit straight line, over the device’s rated temperature
range.
Note 9: Quiescent current is defined in the circuit of Figure 1.
Note 10: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. DC and AC electrical specifications do not apply when operating
the device beyond its rated operating conditions. See Note 1.
Note 11: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 12: See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” or the section titled “Surface Mount” found in a current National
Semiconductor Linear Data Book for other methods of soldering surface mount devices.
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