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LM35 Datasheet, PDF (4/15 Pages) National Semiconductor (TI) – Precision Centigrade Temperature Sensors | |||
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Absolute Maximum Ratings (Note 10)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
Output Voltage
Output Current
Storage Temp.;
TO-46 Package,
TO-92 Package,
SO-8 Package,
TO-220 Package,
Lead Temp.:
TO-46 Package,
(Soldering, 10 seconds)
+35V to â0.2V
+6V to â1.0V
10 mA
â60ËC to +180ËC
â60ËC to +150ËC
â65ËC to +150ËC
â65ËC to +150ËC
300ËC
TO-92 and TO-220 Package,
(Soldering, 10 seconds)
260ËC
SO Package (Note 12)
Vapor Phase (60 seconds)
215ËC
Infrared (15 seconds)
220ËC
ESD Susceptibility (Note 11)
2500V
Specified Operating Temperature Range: TMIN to T MAX
(Note 2)
LM35, LM35A
â55ËC to +150ËC
LM35C, LM35CA
â40ËC to +110ËC
LM35D
0ËC to +100ËC
Electrical Characteristics
(Notes 1, 6)
Parameter
Conditions
Accuracy
(Note 7)
Nonlinearity
(Note 8)
Sensor Gain
(Average Slope)
Load Regulation
(Note 3) 0â¤ILâ¤1 mA
Line Regulation
(Note 3)
Quiescent Current
(Note 9)
Change of
Quiescent Current
(Note 3)
Temperature
Coefficient of
Quiescent Current
Minimum Temperature
for Rated Accuracy
Long Term Stability
T A=+25ËC
T A=â10ËC
T A=TMAX
T A=TMIN
T MINâ¤TAâ¤TMAX
T MINâ¤TAâ¤TMAX
T A=+25ËC
T MINâ¤TAâ¤TMAX
T A=+25ËC
4Vâ¤V Sâ¤30V
V S=+5V, +25ËC
V S=+5V
V S=+30V, +25ËC
V S=+30V
4Vâ¤VSâ¤30V, +25ËC
4Vâ¤V Sâ¤30V
In circuit of
Figure 1, IL=0
T J=TMAX, for
1000 hours
Typical
±0.2
±0.3
±0.4
±0.4
±0.18
+10.0
±0.4
±0.5
±0.01
±0.02
56
105
56.2
105.5
0.2
0.5
+0.39
+1.5
±0.08
LM35A
Tested
Limit
(Note 4)
±0.5
±1.0
±1.0
+9.9,
+10.1
±1.0
±0.05
67
68
1.0
Design
Limit
(Note 5)
±0.35
±3.0
±0.1
131
133
2.0
+0.5
+2.0
Typical
±0.2
±0.3
±0.4
±0.4
±0.15
+10.0
±0.4
±0.5
±0.01
±0.02
56
91
56.2
91.5
0.2
0.5
+0.39
+1.5
±0.08
LM35CA
Tested
Limit
(Note 4)
±0.5
±1.0
Design
Limit
(Note 5)
±1.0
±1.5
±0.3
Units
(Max.)
ËC
ËC
ËC
ËC
ËC
±1.0
±0.05
67
68
1.0
+9.9,
+10.1
±3.0
±0.1
114
116
2.0
mV/ËC
mV/mA
mV/mA
mV/V
mV/V
µA
µA
µA
µA
µA
µA
+0.5
µA/ËC
+2.0
ËC
ËC
3
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