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HD3SS6126_14 Datasheet, PDF (5/17 Pages) Texas Instruments – USB 3.0 and USB 2.0 Differential Switch 2:1/1:2 MUX/DEMUX
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HD3SS6126
SLAS975 – NOVEMBER 2013
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
θJA
Junction-to-ambient thermal resistance
θJB
Junction-to-board thermal resistance
θJCT
Junction-to-case-Top thermal resistance
ΨJB
Junction-to-board thermal resistance Metric
ΨJT
Junction-to-case-Top thermal resistance Metric
High-K board(1)
High-K board(1)
53.8
27.4
38.2
°C/W
27.3
5.6
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953A, IC
Package Thermal Metrics. Test conditions for ΨJB and ΨJT are clarified in the application report.
RECOMMENDED OPERATING CONDITIONS
Typical values for all parameters are at VCC = 3.3 V and TA = 25°C. All temp limits are specified by design.
MIN TYP
VDD
VIH
VIL
VI/O_Diff
Supply voltage
Input high voltage
Input low voltage
Differential voltage
Control Pins
Control Pins
Switch I/O differential voltage for High-bandwidth signal
path only: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n)
3.0
3.3
2.0
–0.1
0
VI/O_CM
Common voltage
Switch I/O common mode voltage for High-bandwidth signal
path only: SSA0/1(p/n), SSB0/1(p/n), SSC0/1(p/n)
0
TA
Operating free-air temperature
0
MAX
3.6
VDD
0.8
1.8
2.0
70
UNIT
V
V
V
Vp-p
V
°C
ELECTRICAL CHARACTERISTICS – DEVICE PARAMETERS
over recommended operating conditions (unless otherwise noted)
PARAMETER
CONDITIONS
ICC
SEL
Supply current
VDD = 3.6 V, SEL = VDD /GND; OE = GND; Outputs Floating
IIH
Input high current
IIL
Input high current
HS_OE
VDD = 3.6V, VIN = VDD
VDD = 3.6V, VIN = GND
IIH
Input high current
IIL
Input high current
SSA0/1, SSB0/1, SSC0/1
VDD = 3.6V, VIN = VDD
VDD = 3.6V, VIN = GND
ILK
High-impedance leakage
current
HSA, HSB, HSC
VDD = 3.6V, VIN = 2V, VOUT= 2V,
(ILK on open outputs Port B and C)
VDD = 3.6V, VIN = 2V, VOUT= 2V,
(ILK on open outputs Port A)
ILK
High-impedance leakage VDD = 3.6V, VIN = 0V, VOUT= 0V to 4V,
current
HS_OE_IN = GND
MIN TYP MAX UNIT
2.4
3 mA
95 µA
1 µA
1 µA
1 µA
130 µA
4 µA
1 µA
Copyright © 2013, Texas Instruments Incorporated
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