BQ2023_16 Datasheet, PDF (5/32 Pages) Texas Instruments – SINGLE-WIRE ADVANCED BATTERY MONITOR IC

Not Recommended for New Designs
bq2023
SINGLEĆWIRE ADVANCED BATTERY MONITOR IC
FOR CELLULAR AND PDA APPLICATIONS
SLUS480B – MAY 2001
flash memory characteristics over recommended operating temperature and supply voltage
(unless otherwise noted)
PARAMETER
Data retention
Flash programming write-cycles
t(BYTERPROG) Byte programming time
t(BLKERASE) Block-erase time
ICC(PROG)
Flash-write supply current
ICC(ERASE)
Flash-erase supply current
NOTE 7: Assured by design. Not production tested.
TEST CONDITIONS
See Note 7
See Note 7
See Note 7
60 µs +30 µs/byte, See Note 7
VCC = 5, See Note 7
VCC = 5, See Note 7
MIN
10,000
TYP MAX UNIT
5 Years
Cycles
200 µs
1,500 µs
30 mA
30 mA
SDQ communication timing specification over recommended operating temperature and pull-up
voltage (unless otherwise noted) (See Figures 2 through 6)
PARAMETER
t(SLOT)
t(LOW1)
t(LOW0)
t(REC)
t(LOWR)
t(RDV)
t(REL)
Bit cycle time (See Figure 1)
Write bit one time (See Figure 1)
Write bit zero time (See Figure 2)
Recovery time (See Figure 2)
Read bit strobe time (See Figure 3)
Read data valid time (See Figure 3)
Read data release time (See Figure
4)
t(RSTL)
Reset time low (See Figure 5)
t(RSTH)
Reset time high (See Figure 5)
t(PDH)
Presence pulse delay (See Figure 5)
t(PDL)
Presence pulse delay (See Figure 5)
NOTE 8: 5-kΩ pullup on SDQ pin
TEST CONDITIONS
See Note 8
t(LOW0) must be less than t(SLOT), See Note 8
See Note 8
See Note 8
See Note 8
MIN
60
1
60
1
1
tLOWR
See Note 8
t(RSTL) + t(R) < 960 µs, See Note 8
480
See Note 8
300
See Note 8
15
See Note 8
60
TYP MAX UNIT
120
µs
15
120 µs
µs
15 µs
15 µs
30 µs
µs
µs
60 µs
240 µs
timing requirements
V(PU)
t(REC)
VIHmin
VILmax
t(LOW1)
t(SLOT)
Figure 1. SDQ Write Bit-ONE Timing Diagram
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