BQ2060A_15 Datasheet, PDF (42/61 Pages) Texas Instruments – SBS v1.1-Compliant Gas Gauge IC

bq2060A
SLUS500D – OCTOBER 2001 – REVISED OCTOBER 2011
www.ti.com
Table 10. EEPROM Memory Map (continued)
EEPROM
Address
Name
0x58
0x5a
0x5c
0x5e
0x60
0x61
0x62
0x63
0x64
0x65
0x66
0x68
0x6a
0x6c
0x6e
0x70
0x72
0x74
0x76
0x59
0x5b
0x5d
0x5f
0x67
0x69
0x6b
0x6d
0x6f
0x71
0x73
0x75
0x77
Reserved
Reserved
Reserved
VFC Offset*⁽¹⁾
VFC Offset*⁽¹⁾
Temperature Offset*⁽¹⁾
ADC Offset*⁽¹⁾
Cell 2 Calibration Factor*⁽¹⁾
Efficiency Temperature Compensation
Cell 3 Calibration Factor*⁽¹⁾
Efficiency Drop Off Percentage
Cell 4 Calibration Factor*⁽¹⁾
Efficiency Reduction Rate
ADC Voltage Gain*⁽²⁾
ADC Sense Resistor Gain*⁽²⁾
VFC Sense Resistor Gain*⁽²⁾
VOC 25%
VOC 50%
VOC 75%
EDVF/EDV0
EMF/ EDV1
EDV T0 Factor
Chemistry
—
—
—
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion
Nickel
Li-Ion
Nickel
Li-Ion
Nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
0x78 0x79 EDV C1/C0 Factor/EDV2
Li-Ion, nickel
0x7a
0x7c
0x7e
0x7b
0x7d
0x7f
EDV R0 Factor
EDV R1 Factor
Check Byte 2
Li-Ion, nickel
Li-Ion, nickel
Li-Ion, nickel
NiMH
Example
0
0
0
0
0
0
0
—
0.25%
—
96%
—
1%
16 : 1
0.05 Ω
0.05 Ω
11500 mV
12500 mV
13500 mV
9500 mV
10000 mV
0
10500 mV
0
0
42330
Data
MSB LSB
—
00
—
00
00
00
00
00
—
00
—
00
—
00
—
—
—
20
—
—
—
a0
—
—
—
50
4e
20
30
d4
20
00
d3
14
cf
2c
cb
44
25
1c
27
10
00
00
29
04
00
00
—
00
a5
5a
Li-Ion
Example
0
0
0
0
0
0
0
0
—
0
—
0
—
16 : 1
0.05 Ω
0.05 Ω
10550 mV
10750 mV
11200 mV
10265 mV
11550
4475
C1 = 0
C0 = 235
5350
250
42330
Data
MSB LSB
—
00
—
00
00
00
00
00
—
00
—
00
—
00
—
00
—
—
—
00
—
—
—
00
—
—
4e
20
30
d4
20
00
d6
ca
d6
02
d4
40
28
19
2d
1e
11
7b
00
eb
14
e6
00
fa
a5
5a
(1) Reserved locations must be set as shown. Locations marked with an asterisk are calibration values that can be adjusted for maximum
accuracy. For these locations the table shows the appropriate default or initial setting.
(2) Reserved locations must be set as shown. Locations marked with an asterisk are calibration values that can be adjusted for maximum
accuracy. For these locations the table shows the appropriate default or initial setting.
EDV Thresholds and Near-Full Percentage
The bq2060A uses three pack voltage thresholds to provide voltage-based warnings of low battery capacity. The
bq2060A uses the values stored in EEPROM for the EDV0, EDV1, and EDV2 values or calculates the three
thresholds from a base value and the temperature, capacity, and rate adjustment factors stored in EEPROM. If
EDV compensation is disabled then EDV0, EDV1, and EDV2 are stored directly in mV in EE 0x72–0x73, EE
0x74–0x75, and EE 0x78–0x79, respectively.
For capacity correction at EDV2, Battery Low % EE 0x54 can be set at a desired state-of-charge,
STATEOFCHARGE%, in the range of 5 to 20%. Typical values for STATEOFCHARGE% are 7–12%
representing 7–12% capacity.
Battery Low % = STATEOFCHARGE% x 2.56
(7)
The bq2060A updates FCC if a qualified discharge occurs from a near-full threshold to EDV2. The desired
near-full threshold window, NFW (mAh), is programmed in Near Full in EE 0x55.
Near Full = ^NFW
2
(8)
42
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