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TL750M05-Q1 Datasheet, PDF (4/23 Pages) Texas Instruments – AUTOMOTIVE LOW-DROPOUT VOLTAGE REGULATORS
TL750Mxx-Q1, TL751Mxx-Q1
SGLS312J – SEPTEMBER 2005 – REVISED JUNE 2011
TL751Mxx ELECTRICAL CHARACTERISTICS
VI = 14 V, IO = 300 mA, TJ = 25°C
PARAMETER
Response time, ENABLE to output (start-up)
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TL751Mxx
TYP
50
UNIT
µs
TL750M05/TL751M05 ELECTRICAL CHARACTERISTICS
VI = 14 V, IO = 300 mA, ENABLE at 0 V for TL751M05, TJ = –40°C to 125°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
TL750M05
TL751M05
MIN TYP MAX
UNIT
Output voltage
Line regulation
Power-supply ripple rejection
Load regulation
Dropout voltage(2)
Current consumption
Iq = II – IO
Shutdown current (TL751M05 only)
VI = 6 V to 26 V
VI = 9 V to 16 V,
IO = 250 mA
VI = 6 V to 26 V,
IO = 250 mA
VI = 8 V to 18 V,
f = 120 Hz
IO = 5 mA to 750 mA
IO = 500 mA, TJ = 25°C
IO = 750 mA, TJ = 25°C
IO = 750 mA
IO = 10 mA
ENABLE VIH ≥ 2 V
4.85
5 5.15 V
10
25
mV
12
50
55
dB
20
50 mV
0.5
V
0.65
60
75
mA
5
200 µA
(1) Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be
taken into account separately. All characteristics are measured with a 0.1-µF capacitor across the input and a 10-µF tantalum capacitor
on the output, with equivalent series resistance within the guidelines shown in Figure 4.
(2) Measured when the output voltage, VO, has dropped 100 mV from the nominal value obtained at VI = 14 V.
TL750M08/TL751M08 ELECTRICAL CHARACTERISTICS
VI = 14 V, IO = 300 mA, ENABLE at 0 V for TL751M08, TJ = –40°C to 125°C (unless otherwise noted)(1)
PARAMETER
TEST CONDITIONS
TL750M08
TL751M08
MIN TYP MAX
UNIT
Output voltage
Line regulation
Power-supply ripple rejection
Load regulation
Dropout voltage(2)
Current consumption
Iq = II – IO
Shutdown current (TL751M08 only)
VI = 6 V to 26 V
VI = 10 V to 17 V, IO = 250 mA
VI = 9 V to 26 V,
IO = 250 mA
VI = 11 V to 21 V, f = 120 Hz
IO = 5 mA to 750 mA
IO = 500 mA, TJ = 25°C
IO = 750 mA, TJ = 25°C
IO = 750 mA, TJ = 25°C
IO = 10 mA
ENABLE VIH ≥ 2 V
7.76
8 8.24 V
12
40
mV
15
68
55
dB
24
80 mV
0.5
V
0.65
60
75
mA
5
200 µA
(1) Pulse-testing techniques maintain the junction temperature as close to the ambient temperature as possible. Thermal effects must be
taken into account separately. All characteristics are measured with a 0.1-µF capacitor across the input and a 10-µF tantalum capacitor
on the output, with equivalent series resistance within the guidelines shown in Figure 4.
(2) Measured when the output voltage, VO, has dropped 100 mV from the nominal value obtained at VI = 14 V.
4
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