THS3091 Datasheet, PDF (4/45 Pages) Texas Instruments – HIGH-VOLTAGE, LOW-DISTORTION, CURRENT-FEEDBACK OPERATIONAL AMPLIFIERS

THS3091, THS3095
SLOS423H – SEPTEMBER 2003 – REVISED DECEMBER 2015
6 Specifications
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6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)⁽¹⁾
V_S- to V_S+
V_I
V_ID
I_O
T_J
T_J ⁽²⁾
T_stg
Supply voltage
Input voltage
Differential input voltage
Output current
Continuous power dissipation
Maximum junction temperature
Maximum junction temperature, continuous operation, long-term reliability
Storage temperature
MIN
MAX
33
4
350
See ESD Ratings
150
125
–65
150
UNIT
V
±V_S
±V
mA
°C
°C
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
6.2 ESD Ratings
V_(ESD)
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾
Electrostatic discharge _{Charged-device model (CDM), per JEDEC specification JESD22-C101(2)}
VALUE
±2000
±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
UNIT
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
Supply voltage
Dual supply
Single supply
T_A
Operating free-air temperature
MIN
NOM
MAX UNIT
±5
±15
±16
V
10
30
32
–40
85
°C
6.4 Thermal Information
THS309x
THERMAL METRIC⁽¹⁾
D (SOIC)
DDA (SO
PowerPAD) ⁽²⁾
UNIT
8 PINS
8 PINS
R_θJA
R_θJC(top)
R_θJB
ψ_JT
ψ_JB
R_θJC(bot)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
113.5
57.7
54.2
11.5
53.7
n/a
51.8
°C/W
58.3
°C/W
32.3
°C/W
12.2
°C/W
32.2
°C/W
7.8
°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2) The THS3091 and THS3095 may incorporate a PowerPAD on the underside of the chip. This acts as a heatsink and must be connected
to a thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature
which could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD
thermally enhanced package.
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