THMC10_08 Datasheet, PDF (4/22 Pages) Texas Instruments – REMOTE/LOCAL TEMPERATURE MONITOR WITH SMBus INTERFACE

THMC10
REMOTE/LOCAL TEMPERATURE MONITOR
WITH SMBus INTERFACE
SLIS089 − DECEMBER 1999
dc electrical characteristics, V_DD = 3.3 V, T_A = 25°C (unless otherwise noted)
A/D and supply
T(RES)
T(ERR1)
T(ERR2)
V(UVLOCK)
V(POR)
I(DD,STANDBY)
PARAMETER
TEST CONDITIONS
Temperature resolution
No missed codes
Initial temperature error from internal
diode
Initial temperature error from external
diode (see Note 2)
Under voltage lockout voltage
Power-up reset threshold
VDD standby supply current
TA = 60°C to 100°C
TA = full range
TA = 60°C to 100°C
TA = full range
VDD input, disables acquisition, rising edge
On VDD input, falling edge
Logic inputs forced to VDD or GND,
STBY mode, SMBus is static
Logic inputs forced to VDD or GND,
STBY mode, SCLK = 10 kHz
MIN
1
−2
−3
−2.5
−3.5
2.65
1
IDD
V(D,SOURCE)
I(DLEAK)
I(ADD,BIAS)
I(DIODE)
VDD operating supply current (aver-
aged over 4 seconds in auto-acquire
mode)
DXN source voltage
DXP and DXN leakage current
Add {0:1} bias current
Diode source current
Slow auto-aquire rate (0.25 samples/sec)
Fast auto-aquire rate (2 samples/sec)
STBY = 0, DXP = DXN = 0
Momentary on power up
DXP = 1.5 V, high level
DXP = 1.5 V, low level
I(RATIO)
Diode source current ratio
DXP +
1.5
V,
high level
low level
9.7
ǒ Ǔ _{NOTE 2:}
Based
on
T(°C)
+
q
n
k
DVBE
[ln(10)]
*
273
Where
q = 1.6 × 10−19
n = 1.0085
k = 1.38 × 10−23
(charge)
(diode ideality factor)
(Boltzman’s constant)
TYP MAX UNITS
°C
2
°C
3
2.5
°C
3.5
2.8 2.95 V
2.25 2.5 V
3
10 µA
4
µA
40
70
µA
45 180
0.7
V
2 µA
35 100 µA
100
µA
10
10 10.2
SMBus
PARAMETER
VIH
VIL
IOL1
IOL2
II
Input high voltage
Input low voltage
SMBus output low current
ALERT output low current
SMBus input current
TEST CONDITIONS
SDATA = 0.6 V
ALERT = 0.4 V
MIN TYP MAX UNITS
2.2
V
0.8 V
6
mA
1
mA
−1
1 µA
4
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