LMH6702QML Datasheet, PDF (4/14 Pages) Texas Instruments – 1.7 GHz, Ultra Low Distortion, Wideband Op Amp

LMH6702 Electrical Characteristics
DC Parameters (Note 4), (Note 5)
The following conditions apply, unless otherwise specified.
R_L = 100Ω, V_CC = ±5V_DC, A_V = +2 feedback resistor (R_F) = 250Ω, gain resistor (R_G) = 250Ω
Symbol Parameter
Conditions
Notes
Min Max Unit
I_BN
I_BI
V_IO
I_CC
PSSR
Input Bias Current, Noninverting
Input Bias Current, Iverting
Input Offset Voltage
Supply Current, no load
Power Supply Rejection Ratio
R_L = ∞
-V_CC = -4.5V to -5.0V,
+V_CC = +4.5V to +5.0V
-15 +15
μA
-21 +21
μA
-30 +30
μA
-34 +34
μA
-4.5 +4.5
mV
-6.0 +6.0
mV
15
mA
45
dB
Sub-
groups
1, 2
3
1, 2
3
1, 3
2
1, 2, 3
1, 2, 3
AC Parameters (Note 4), (Note 6)
The following conditions apply, unless otherwise specified.
R_L = 100Ω, V_CC = ±5V_DC, A_V = +2 feedback resistor (R_F) = 250Ω, gain resistor (R_G) = 250Ω
Symbol Parameter
Conditions
Notes Min Max Unit
HD₃
GFPL
GFPH
GFRH
HD₂
3rd Harmonic Distortion
Gain Flatness Peaking
Gain Flatness Peaking
Gain Flatness Rolloff
2nd Harmonic Distortion
2V_PP at 20MHz
0.1MHz to 75MHz, V_O < 0.5V_PP
> 75MHz, V_O < 0.5V_PP
75MHz to 125MHz, V_O<0.5V_PP
2V_PP at 20MHz
-62
dBc
0.4
dB
2.0
dB
0.2
dB
-52
dBc
Sub-
groups
4
4
4
4
4
Drift Values Parameters (Note 4)
The following conditions apply, unless otherwise specified.
R_L = 100Ω, V_CC = ±5V_DC, A_V = +2 feedback resistor (R_F) = 250Ω, gain resistor (R_G) = 250Ω
"Delta not required on B level product. Delta required for S-level product at Group B5 only, or as specified on the Internal Processing
Instruction (IPI)."
Symbol Parameter
Conditions
Notes Min Max Unit
Sub-
groups
I_BN
Input Bias Current Noninverting
I_BI
Input Bias Current Inverting
V_IO
Input Offset Voltage
-0.3 +0.3
μA
1
-3.0 +3.0
μA
1
-0.3 +0.3
mV
1
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is functional,
but do not guarantee specific performance limits. For guaranteed specifications and test conditions see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by T_Jmax (maximum junction temperature), θ_JA (package
junction to ambient thermal resistance), and T_A (ambient temperature). The maximum allowable power dissipation at any temperature is P_Dmax = (T_Jmax - T_A)/
θ_JA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 1.5kΩ in series with 100pF.
Note 4: The algebraic convention, whereby the most negative value is a minimum and most positive is a maximum, is used in this table. Negative cur rent shall
be defined as convential current flow out of a device terminal.
Note 5: Pre and Post irradiation limits are identical to those listed under the DC parameter tables above. Post irradiation testing is conducted at room temperature,
+25°C, only. Testing is performed as specified in MIL-STD-883 Test Method 1019 Condition A. The ELDRS-Free part is also tested per Test Method 1019
Conditions D.
Note 6: These parameters are not post irradiation tested.
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