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DS90C031QML_16 Datasheet, PDF (4/21 Pages) Texas Instruments – LVDS Quad CMOS Differential Line Driver
DS90C031QML
SNLS202B – MARCH 2006 – REVISED MARCH 2013
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Table 1. Mil-Std-883, Method 5005 - Group A
Subgroup
1
2
3
4
5
6
7
8A
8B
9
10
11
12
13
14
Description
Static tests at
Static tests at
Static tests at
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Settling time at
Settling time at
Settling time at
Temp (°C)
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
+25
+125
-55
DC Parameters (1)
Symbol
Parameter
Conditions
Notes Min Max Units
Sub-
groups
VOD1
DVOD1
Differential Ouput Voltage
Change in Magnitude of Vod1 for
complementary output States
RL = 100Ω
RL = 100Ω
250 450
mV
35
mV
1, 2, 3
1, 2, 3
VOS
Offset Voltage
RL = 100Ω
1.12 1.37
V
5
5
1, 2, 3
DVOS
Change in Magnitude of Vos for RL = 100Ω
Complementary Output States
25
mV
1, 2, 3
VOH
Output Voltage High
RL = 100Ω
VOL
Output Voltage Low
RL = 100Ω
VIH
Input Voltage High
VIL
Input Voltage Low
II
Input Current
VI = VCC, Gnd, 2.5, or 0.4V
VCl
Input Clamp Voltage
ICl = -18mA
IOS
Output Short Circuit Current
VO = 0V
IOff
Power-off Leakage
VO = 0V or 2.4V,
VCC-= 0V or Open
IOZ
Output TRI-STATE Current
EN = 0.8V and EN* = 2.0V
VO = 0V or VCC
ICC
Drivers Enabled Supply Current DI = Hi or Low
ICCZ
Drivers Disabled Supply Current DI = Hi or Low, En = Gnd,
En* = VCC
1.6
V
1, 2, 3
0.9
V
1, 2, 3
(2)
2.0 VCC
V
1, 2, 3
(2)
Gnd 0.8
V
1, 2, 3
±10
µA
1, 2, 3
-1.5
V
1, 2, 3
-5.0
mA
1, 2, 3
±10
µA
1, 2, 3
±10
µA
1, 2, 3
25
mA
10
mA
1, 2, 3
1, 2, 3
(1) Pre and Post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the “Post
Radiation Limits” table. Radiation end point limits for the noted parameters are guaranteed only for the conditions, as specified.
(2) Tested during VOH / VOL tests.
4
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