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| BQ24314CDSGR Datasheet, PDF (4/22 Pages) Texas Instruments – OVERVOLTAGE AND OVERCURRENT PROTECTION IC AND Li+ CHARGER FRONT-END PROTECTION IC | |||
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bq24314C
SLUSAV3 â AUGUST 2012
www.ti.com
ELECTRICAL CHARACTERISTICS
over junction temperature range â40°C to 125°C and recommended supply voltage (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP
IN
UVLO
Undervoltage lock-out, input power
detected threshold
CE = Low, VIN increasing from 0V to 3V
2.6 2.7
Vhys(UVLO) Hysteresis on UVLO
TDGL(PGOOD)
Deglitch time, input power detected
status
CE = Low, VIN decreasing from 3V to 0V
CE = Low. Time measured from VIN 0V â 5V 1μs
rise-time, to output turning ON
200 260
8
IDD
Operating current
CE = Low, No load on OUT pin,
VIN = 5V, RILIM = 25kâ¦
400
ISTDBY
Standby current
CE = High, VIN = 5.0V
65
INPUT TO OUTPUT CHARACTERISTICS
VDO
Drop-out voltage IN to OUT
CE = Low, VIN = 5V, IOUT = 1A
170
INPUT OVERVOLTAGE PROTECTION
VOVP
tPD(OVP)
Vhys(OVP)
tON(OVP)
Input overvoltage protection threshold
Input OV propagation delay(1)
Hysteresis on OVP
Recovery time from input overvoltage
condition
INPUT OVERCURRENT PROTECTION
CE = Low, VIN increasing from 5V to 7.5V
CE = Low
CE = Low, VIN decreasing from 7.5V to 5V
CE = Low, Time measured from
VIN 7.5V â 5V, 1μs fall-time
5.71 5.85
200
20
60
8
IOCP
Input overcurrent protection threshold
range
300
IOCP
KILIM
tBLANK(OCP)
Input overcurrent protection threshold
Programmable current limit factor
Blanking time, input overcurrent
detected
CE = Low, RILIM = 24.9kâ¦,
3 V ⤠VIN < VOVP -Vhys(OVP)
900 1000
25
176
tREC(OCP)
Recovery time from input overcurrent
condition
64
BATTERY OVERVOLTAGE PROTECTION
BVOVP
Battery overvoltage protection
threshold
CE = Low, VIN > 4.4V
4.40 4.45
Vhys(Bovp)
IVBAT
TDGL(Bovp)
Hysteresis on BVOVP
Input bias current on VBAT pin
Deglitch time, battery overvoltage
detected
CE = Low, VIN > 4.4V
VBAT = 4.4V, TJ = 25°C
CE = Low, VIN > 4.4V. Time measured from VVBAT
rising from 4.1V to 4.4V to FAULT going low.
200 280
176
THERMAL PROTECTION
TJ(OFF)
Thermal shutdown temperature
140
TJ(OFF-HYS) Thermal shutdown hysteresis
20
LOGIC LEVELS ON CE
VIL
Low-level input voltage
0
VIH
High-level input voltage
1.4
IIL
Low-level input current
VCE = 0V
IIH
High-level input current
VCE = 1.8V
LOGIC LEVELS ON FAULT
VOL
Output low voltage
ISINK = 5mA
IHI-Z
Leakage current, FAULT pin HI-Z
VFAULT = 5V
MAX UNIT
2.8 V
300 mV
ms
600 μA
95 μA
280 mV
6.00 V
ns
110 mV
ms
1500 mA
1100 mA
Aâ¦
μs
ms
4.5 V
350 mV
10 nA
μs
150 °C
°C
0.4 V
V
1 μA
15 μA
0.2 V
10 μA
(1) Not tested in production. Specified by design.
4
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Copyright © 2012, Texas Instruments Incorporated
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